Ji Hyungyong, Choi Jaeho, Lim Gyoungho, Parida Bhaskar, Kim Keunjoo, Jo Jung Hee, Kim Hong Seub
Department of Mechanical Engineering and Research Center of Industrial Technology, Chonbuk National University Jeonju 561-756, R. O. Korea.
J Nanosci Nanotechnol. 2013 Dec;13(12):7806-13. doi: 10.1166/jnn.2013.8119.
We investigated a nanotexturing process on the microtextured surface of single crystalline silicon solar cell by the reactive ion etching process in SF6/O2 mixed gas ambient. P-type Si wafer samples were prepared using a chemical wet etching process to address saw damage removal and achieve microtexturing. The microtextured wafers were further processed for nanotexturing by exposure to reactive ions within a circular tray of wafer carrier containing many small holes for uniform etching. As the dry etching times were increased to 2, 4 and finally to 8 min, surface structures were observed in a transition from nanoholes to nanorods, and a variation in wafer color from dark blue to black. The surface nanostructures showed a lowered photoreflectance and enhanced quantum efficiency within the visible light region with wavelengths of less than 679 nm. The nanohole structure etched for 2 min showed enhanced conversion efficiency when compared to the bare sample; however, the nanorod structure etched for 8 min exhibited the decreased efficiency with a reduced short circuit current, indicating that the surface nanostructural damage with the enlarged nanoperimetric surface area is sensitive to surface passivation from the surface recombination process.
我们在SF6/O2混合气体环境中通过反应离子刻蚀工艺研究了单晶硅太阳能电池微纹理表面上的纳米纹理化工艺。使用化学湿法刻蚀工艺制备P型硅片样品,以消除锯切损伤并实现微纹理化。将微纹理化的晶片进一步放入含有许多用于均匀蚀刻的小孔的晶片承载器的圆形托盘中,通过暴露于反应离子中来进行纳米纹理化处理。随着干法蚀刻时间增加到2分钟、4分钟,最终增加到8分钟,观察到表面结构从纳米孔过渡到纳米棒,并且晶片颜色从深蓝色变为黑色。表面纳米结构在波长小于679nm的可见光区域内显示出降低的光反射率和增强的量子效率。与裸样品相比,蚀刻2分钟的纳米孔结构显示出转换效率提高;然而,蚀刻8分钟的纳米棒结构表现出效率降低,短路电流减小,这表明具有增大的纳米周长表面积的表面纳米结构损伤对表面复合过程中的表面钝化敏感。