McKenna Keith P
Department of Physics, University of York , Heslington, York YO10 5DD, United Kingdom.
J Am Chem Soc. 2013 Dec 18;135(50):18859-65. doi: 10.1021/ja408342z. Epub 2013 Dec 5.
Dislocations represent an important and ubiquitous class of topological defect found at the surfaces of metal oxide materials. They are thought to influence processes as diverse as crystal growth, corrosion, charge trapping, luminescence, molecular adsorption, and catalytic activity; however, their electronic and chemical properties remain poorly understood. Here, through a detailed first-principles investigation into the properties of a surface-terminated screw dislocation in MgO we provide atomistic insight into these issues. We show that surface dislocations can exhibit intriguing electron trapping properties which are important for understanding the chemical and electronic characteristics of oxide surfaces. The results presented in this article taken together with recent experimental reports show that surface dislocations can be equally as important as more commonly considered surface defects, such as steps, kinks, and vacancies, but are now just beginning to be understood.
位错是金属氧化物材料表面存在的一类重要且普遍的拓扑缺陷。人们认为它们会影响诸如晶体生长、腐蚀、电荷俘获、发光、分子吸附和催化活性等多种过程;然而,它们的电子和化学性质仍知之甚少。在此,通过对氧化镁中表面终止的螺旋位错性质进行详细的第一性原理研究,我们对这些问题提供了原子层面的见解。我们表明表面位错可展现出有趣的电子俘获特性,这对于理解氧化物表面的化学和电子特性很重要。本文给出的结果与近期的实验报告共同表明,表面位错可能与更常被考虑的表面缺陷(如台阶、扭结和空位)同样重要,但目前才刚刚开始被理解。