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界面改性剂在混合太阳能电池中的作用:无机/聚合物双层与无机/聚合物:富勒烯本体异质结

Roles of interfacial modifiers in hybrid solar cells: inorganic/polymer bilayer vs inorganic/polymer:fullerene bulk heterojunction.

作者信息

Eom Seung Hun, Baek Myung-Jin, Park Hanok, Yan Liang, Liu Shubin, You Wei, Lee Soo-Hyoung

机构信息

School of Semiconductor and Chemical Engineering, Chonbuk National University , 567 Baekje-daero, Deokjin-gu, Jeonju-si, Jeollabuk-do 561-756, Republic of Korea.

出版信息

ACS Appl Mater Interfaces. 2014 Jan 22;6(2):803-10. doi: 10.1021/am402684w. Epub 2014 Jan 3.

Abstract

Hybrid solar cells (HSCs) incorporating both organic and inorganic materials typically have significant interfacial issues which can significantly limit the device efficiency by allowing charge recombination, macroscopic phase separation, and nonideal contact. All these issues can be mitigated by applying carefully designed interfacial modifiers (IMs). In an attempt to further understand the function of these IMs, we investigated two IMs in two different HSCs structures: an inverted bilayer HSC of ZnO:poly(3-hexylthiophene) (P3HT) and an inverted bulk heterojunction (BHJ) solar cell of ZnO/P3HT:[6,6]-phenyl C61-butyric acid methyl ester (PCBM). In the former device configuration, ZnO serves as the n-type semiconductor, while in the latter device configuration, it functions as an electron transport layer (ETL)/hole blocking layer (HBL). In the ZnO:P3HT bilayer device, after the interfacial modification, a power conversion efficiency (PCE) of 0.42% with improved Voc and FF and a significantly increased Jsc was obtained. In the ZnO/P3HT:PCBM based BHJ device, including IMs also improved the PCE to 4.69% with an increase in Voc and FF. Our work clearly demonstrates that IMs help to reduce both the charge recombination and leakage current by minimizing the number of defect sites and traps and to increase the compatibility of hydrophilic ZnO with the organic layers. Furthermore, the major role of IMs depends on the function of ZnO in different device configurations, either as n-type semiconductor in bilayer devices or as ETL/HBL in BHJ devices. We conclude by offering insights for designing ideal IMs in future efforts, in order to achieve high-efficiency in both ZnO:polymer bilayer structure and ZnO/polymer:PCBM BHJ devices.

摘要

包含有机和无机材料的混合太阳能电池(HSCs)通常存在显著的界面问题,这些问题会通过电荷复合、宏观相分离和非理想接触显著限制器件效率。通过应用精心设计的界面改性剂(IMs),所有这些问题都可以得到缓解。为了进一步了解这些IMs的功能,我们在两种不同的HSCs结构中研究了两种IMs:ZnO:聚(3-己基噻吩)(P3HT)的倒置双层HSC和ZnO/P3HT:[6,6]-苯基C61-丁酸甲酯(PCBM)的倒置体异质结(BHJ)太阳能电池。在前一种器件配置中,ZnO用作n型半导体,而在后一种器件配置中,它用作电子传输层(ETL)/空穴阻挡层(HBL)。在ZnO:P3HT双层器件中,界面改性后,获得了0.42%的功率转换效率(PCE),开路电压(Voc)和填充因子(FF)得到改善,短路电流密度(Jsc)显著增加。在基于ZnO/P3HT:PCBM的BHJ器件中,加入IMs也将PCE提高到了4.69%,Voc和FF都有所增加。我们的工作清楚地表明,IMs通过最小化缺陷位点和陷阱的数量,有助于减少电荷复合和漏电流,并提高亲水性ZnO与有机层的兼容性。此外,IMs的主要作用取决于ZnO在不同器件配置中的功能,在双层器件中作为n型半导体,在BHJ器件中作为ETL/HBL。我们通过为未来设计理想的IMs提供见解来得出结论,以便在ZnO:聚合物双层结构和ZnO/聚合物:PCBM BHJ器件中都实现高效率。

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