Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong , Hong Kong, Hong Kong SAR.
ACS Nano. 2014 Feb 25;8(2):1923-31. doi: 10.1021/nn406505t. Epub 2014 Jan 30.
Tunable memory characteristics are used in multioperational mode circuits where memory cells with various functionalities are needed in one combined device. It is always a challenge to obtain control over threshold voltage for multimode operation. On this regard, we use a strategy of shifting the work function of reduced graphene oxide (rGO) in a controlled manner through doping gold chloride (AuCl3) and obtained a gradient increase of rGO work function. By inserting doped rGO as floating gate, a controlled threshold voltage (Vth) shift has been achieved in both p- and n-type low voltage flexible memory devices with large memory window (up to 4 times for p-type and 8 times for n-type memory devices) in comparison with pristine rGO floating gate memory devices. By proper energy band engineering, we demonstrated a flexible floating gate memory device with larger memory window and controlled threshold voltage shifts.
可调谐存储特性用于多操作模式电路中，其中需要在一个组合设备中使用具有各种功能的存储单元。在多模式操作中获得对阈值电压的控制始终是一个挑战。在这方面，我们使用通过掺杂氯化金（AuCl3）以受控方式移动还原氧化石墨烯（rGO）的功函数的策略，并获得了 rGO 功函数的梯度增加。通过插入掺杂 rGO 作为浮栅，与原始 rGO 浮栅存储器件相比，在 p 型和 n 型低压柔性存储器件中实现了受控的阈值电压（Vth）漂移，其存储窗口大（p 型器件高达 4 倍，n 型器件高达 8 倍）。通过适当的能带工程，我们展示了具有更大存储窗口和受控阈值电压漂移的柔性浮栅存储器件。
