载流子局域化对AlGaN量子阱中高载流子密度效应的影响。

Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells.

作者信息

Mickevičius Jūras, Jurkevičius Jonas, Tamulaitis Gintautas, Shur Michael S, Shatalov Max, Yang Jinwei, Gaska Remis

出版信息

Opt Express. 2014 Mar 10;22 Suppl 2:A491-7. doi: 10.1364/OE.22.00A491.

DOI:10.1364/OE.22.00A491

Abstract

The influence of carrier localization on photoluminescence efficiency droop and stimulated emission is studied in AlGaN multiple quantum wells with different strength of carrier localization. We observe that carrier delocalization at low temperatures predominantly enhances the nonradiative recombination and causes the droop, while the main effect of the delocalization at elevated temperatures is enhancement of PL efficiency due to increasing contribution of bimolecular recombination of free carriers. When the carrier thermal energy exceeds the dispersion of the potential fluctuations causing the carrier localization, the droop is caused by stimulated carrier recombination.

摘要

在具有不同载流子局域化强度的AlGaN多量子阱中，研究了载流子局域化对光致发光效率下降和受激发射的影响。我们观察到，低温下载流子离域主要增强非辐射复合并导致效率下降，而高温下离域的主要影响是由于自由载流子双分子复合贡献增加而提高了光致发光效率。当载流子热能超过引起载流子局域化的势波动的色散时，效率下降是由受激载流子复合引起的。