Sun Hui, Lu Xu, Chi Hang, Morelli Donald T, Uher Ctirad
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA.
Phys Chem Chem Phys. 2014 Aug 7;16(29):15570-5. doi: 10.1039/c4cp01294a.
GeTe is a versatile base compound to produce highly efficient p-type thermoelectric materials such as the TAGS materials (AgSbTe2)1-x(GeTe)x and GeTe-PbTe nanocomposites. The pure GeTe composition shows a very high power factor, ~42 μW cm(-1) K(-2), between 673 K and 823 K, which is among the highest power factors that have ever been reported in this temperature range. However, its relatively high thermal conductivity limits the dimensionless figure of merit ZT to values of only unity. In this paper, we present an efficient approach to reduce the thermal conductivity by preparing (In2Te3)x(GeTe)(3-3x) solid solutions. In spite of a slight degradation of the electronic properties, the drastic reduction of the thermal conductivity due to a synergistic combination of reduced electronic thermal conductivity, strong alloy scattering, and vacancy phonon scattering leads to ZT values as high as 1.35 at 823 K for the x = 0.05 sample. Our results show that (In2Te3)x(GeTe)(3-3x) is a prospective substitute for TAGS as a p-leg element for high-temperature power generation.
锗碲是一种用途广泛的基础化合物,可用于制备高效的p型热电材料,如TAGS材料(AgSbTe2)1-x(GeTe)x和锗碲-碲化铅纳米复合材料。纯锗碲成分在673 K至823 K之间显示出非常高的功率因数,约为42 μW cm(-1) K(-2),这是该温度范围内报道过的最高功率因数之一。然而,其相对较高的热导率将无量纲品质因数ZT限制在仅为1的值。在本文中,我们提出了一种通过制备(In2Te3)x(GeTe)(3 - 3x)固溶体来降低热导率的有效方法。尽管电子性能略有下降,但由于电子热导率降低、强合金散射和空位声子散射的协同作用导致热导率大幅降低,使得x = 0.05的样品在823 K时ZT值高达1.35。我们的结果表明,(In2Te3)x(GeTe)(3 - 3x)作为高温发电的p型腿元件是TAGS的一种有前景的替代品。