Siodła Tomasz, Ozimiński Wojciech P, Hoffmann Marcin, Koroniak Henryk, Krygowski Tadeusz M
Faculty of Chemistry, Adam Mickiewicz University , Umultowska 89b, 61-614 Poznań, Poland.
J Org Chem. 2014 Aug 15;79(16):7321-31. doi: 10.1021/jo501013p. Epub 2014 Jul 29.
The application of ab initio and DFT computational methods at six different levels of theory (MP2/cc-pVDZ, MP2/aug-cc-pVTZ, B3LYP/cc-pVDZ, B3LYP/aug-cc-pVTZ, M06/cc-pVDZ, and M06/aug-cc-pVTZ) to meta- and para-substituted fluoro- and trifluoromethylbenzene derivatives and to 1-fluoro- and 1-trifluoromethyl-2-substituted trans-ethenes allowed the study of changes in the electronic and geometric properties of F- and CF3-substituted systems under the impact of other substituents (BeH, BF2, BH2, Br, CFO, CHO, Cl, CN, F, Li, NH2, NMe2, NO, NO2, OH, H, CF3, and CH3). Various parameters of these systems have been investigated, including homodesmotic reactions in terms of the substituent effect stabilization energy (SESE), the π and σ electron donor-acceptor indexes (pEDA and sEDA, respectively), the charge on the substituent active region (cSAR, known earlier as qSAR), and bond lengths, which have been regressed against Hammett constants, resulting mostly in an accurate correspondence except in the case of p-fluorobenzene derivatives. Moreover, changes in the characteristics of the ability of the substituent to attract or donate electrons under the impact of the kind of moiety to which the substituent is attached have been considered as the indirect substituent effect and investigated by means of the cSAR model. Regressions of cSAR(X) versus cSAR(Y) for any systems X and Y allow final results to be obtained on the same scale of magnitude.
从头算和密度泛函理论(DFT)计算方法在六种不同理论水平(MP2/cc-pVDZ、MP2/aug-cc-pVTZ、B3LYP/cc-pVDZ、B3LYP/aug-cc-pVTZ、M06/cc-pVDZ和M06/aug-cc-pVTZ)下应用于间位和对位取代的氟代和三氟甲基苯衍生物以及1-氟代和1-三氟甲基-2-取代反式乙烯,从而能够研究在其他取代基(BeH、BF2、BH2、Br、CFO、CHO、Cl、CN、F、Li、NH2、NMe2、NO、NO2、OH、H、CF3和CH3)影响下F-和CF3-取代体系的电子和几何性质变化。对这些体系的各种参数进行了研究,包括基于取代基效应稳定能(SESE)的同系反应、π和σ电子给体-受体指数(分别为pEDA和sEDA)、取代基活性区域的电荷(cSAR,之前称为qSAR)以及键长,这些参数已针对哈米特常数进行回归,除了对氟苯衍生物的情况外,大多得到了准确的对应关系。此外,在取代基所连接的部分类型影响下,取代基吸引或供电子能力特征的变化被视为间接取代基效应,并通过cSAR模型进行研究。对于任何体系X和Y,cSAR(X)与cSAR(Y)的回归能够在相同的数量级尺度上获得最终结果。