The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, Tennessee 37831, USA.
Institute of Physics, National Academy of Sciences of Ukraine, 46, pr. Nauki, 03028 Kiev, Ukraine.
Nat Commun. 2014 Jul 28;5:4545. doi: 10.1038/ncomms5545.
Electric field-induced polarization switching underpins most functional applications of ferroelectric materials in information technology, materials science and optoelectronics. Recently, much attention has been focused on the switching of individual domains using scanning probe microscopy. The classical picture of tip-induced switching, including formation of cylindrical domains with size, is largely determined by the field distribution and domain wall motion kinetics. The polarization screening is recognized as a necessary precondition to the stability of ferroelectric phase; however, screening processes are generally considered to be uniformly efficient and not leading to changes in switching behaviour. Here we demonstrate that single-point tip-induced polarization switching can give rise to a surprisingly broad range of domain morphologies, including radial and angular instabilities. These behaviours are traced to the surface screening charge dynamics, which in some cases can even give rise to anomalous switching against the electric field (ionic field effect).
电场诱导极化反转是铁电材料在信息技术、材料科学和光电子学中大多数功能应用的基础。最近,人们对使用扫描探针显微镜进行单个畴的反转引起了广泛关注。经典的尖端诱导反转图景,包括具有尺寸的圆柱形畴的形成,在很大程度上取决于电场分布和畴壁运动动力学。极化屏蔽被认为是铁电相稳定性的必要前提;然而,屏蔽过程通常被认为是均匀有效的,不会导致反转行为的变化。在这里,我们证明了单点尖端诱导极化反转可以产生非常广泛的畴形态,包括径向和角不稳定性。这些行为可以追溯到表面屏蔽电荷动力学,在某些情况下甚至可以导致反常的反转行为(离子场效应)。