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Pb7Bi4Se13:一种具有良好热电性能的硫铋铅矿同系物。

Pb7Bi4Se13: a lillianite homologue with promising thermoelectric properties.

作者信息

Olvera Alan, Shi Guangsha, Djieutedjeu Honore, Page Alexander, Uher Ctirad, Kioupakis Emmanouil, Poudeu Pierre F P

机构信息

Department of Materials Science and Engineering and §Department of Physics, University of Michigan , Ann Arbor, Michigan 48109, United States.

出版信息

Inorg Chem. 2015 Feb 2;54(3):746-55. doi: 10.1021/ic501327u. Epub 2014 Aug 4.

Abstract

Pb(7)Bi(4)Se(13) crystallizes in the monoclinic space group C2/m (No. 12) with a = 13.991(3) Å, b = 4.262(2) Å, c = 23.432(5) Å, and β = 98.3(3)° at 300 K. In its three-dimensional structure, two NaCl-type layers A and B with respective thicknesses N(1) = 5 and N(2) = 4 [N = number of edge-sharing (Pb/Bi)Se6 octahedra along the central diagonal] are arranged along the c axis in such a way that the bridging monocapped trigonal prisms, PbSe7, are located on a pseudomirror plane parallel to (001). This complex atomic-scale structure results in a remarkably low thermal conductivity (∼0.33 W m(-1) K(-1) at 300 K). Electronic structure calculations and diffuse-reflectance measurements indicate that Pb(7)Bi(4)Se(13) is a narrow-gap semiconductor with an indirect band gap of 0.23 eV. Multiple peaks and valleys were observed near the band edges, suggesting that Pb(7)Bi(4)Se(13) is a promising compound for both n- and p-type doping. Electronic-transport data on the as-grown material reveal an n-type degenerate semiconducting behavior with a large thermopower (∼-160 μV K(-1) at 300 K) and a relatively low electrical resistivity. The inherently low thermal conductivity of Pb(7)Bi(4)Se(13) and its tunable electronic properties point to a high thermoelectric figure of merit for properly optimized samples.

摘要

Pb(7)Bi(4)Se(13)在300 K时结晶于单斜空间群C2/m(编号12),a = 13.991(3) Å,b = 4.262(2) Å,c = 23.432(5) Å,β = 98.3(3)°。在其三维结构中,两个分别具有厚度N(1) = 5和N(2) = 4 [N = 沿中心对角线共享边的(Pb/Bi)Se6八面体数量]的NaCl型层A和B沿c轴排列,使得桥接单帽三角棱柱PbSe7位于平行于(001)的伪镜面上。这种复杂的原子尺度结构导致其热导率极低(300 K时约为0.33 W m(-1) K(-1))。电子结构计算和漫反射测量表明,Pb(7)Bi(4)Se(13)是一种窄带隙半导体,间接带隙为0.23 eV。在带边附近观察到多个峰和谷,表明Pb(7)Bi(4)Se(13)对于n型和p型掺杂都是一种有前景的化合物。关于生长态材料的电子输运数据显示出n型简并半导体行为,具有大的热电势(300 K时约为-∼160 μV K(-1))和相对较低的电阻率。Pb(7)Bi(4)Se(13)固有的低热导率及其可调节的电子性质表明,对于适当优化的样品,其热电优值较高。

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