Using a layer-by-layer assembly method to fabricate a uniform and conductive nitrogen-doped graphene anode for indium-tin oxide-free organic light-emitting diodes.

Highly conductive, uniform, and transparent nitrogen-doped graphene multilayer films were produced by a layer-by-layer (LbL) assembly method. Such a technique was realized by alternate deposition of graphene oxide modified with the cationic surfactant N,N,N-trimethyl-1-dodecanaminium bromide (CTAB) and the anionic surfactant sodium dodecylbenzenesulfonate. In this way, we can achieve a highly conductive (900 S/cm), uniform, and controllable graphene film in terms of thickness, transmittance, and sheet resistance after high-temperature reduction. The improved conductivity is attributed to better graphitization and nitrogen-doping introduced by CTAB. The organic light-emitting diode using such a multilayer graphene film fabricated by the LbL method as an anode obtains higher current density and luminance at low voltage compared to that with an indium-tin oxide (ITO) anode. Moreover, the current efficiency of graphene-based device is comparable to that of an ITO-based device. It is proved that such a nitrogen-doped multilayer graphene film developed by the LbL assembly technique is a promising candidate for a transparent electrode in organic electronics.