Department of Physics and Research Institute for Natural Sciences, Hanyang University, 17 Haengdang-Dong, Seongdong-Ku, Seoul 133-791, Korea.
Phys Rev Lett. 2013 Sep 6;111(10):106403. doi: 10.1103/PhysRevLett.111.106403. Epub 2013 Sep 5.
We perform semilocal and hybrid density-functional theory (DFT) studies of the Sn/Ge(111) surface to identify the origin of the observed insulating sqrt[3]×sqrt[3] phase below ∼30 K. In contrast with the semilocal DFT calculation predicting a metallic 3×3 ground state, the hybrid DFT calculation including van der Waals interactions shows that the insulating ferrimagnetic structure with a sqrt[3]×sqrt[3] structural symmetry is energetically favored over the metallic 3×3 structure. It is revealed that the correction of the self-interaction error with a hybrid exchange-correlation functional gives rise to a band gap opening induced by a ferrimagnetic order. The results show that the observed insulating phase is attributed to the Slater mechanism via itinerant magnetic order rather than the hitherto accepted Mott-Hubbard mechanism via electron correlations.
我们对半局域和混合密度泛函理论(DFT)进行了研究,以确定在约 30 K 以下观察到的 Sn/Ge(111)表面绝缘 sqrt[3]×sqrt[3]相的起源。与半局域 DFT 计算预测的金属 3×3 基态相反,包括范德华相互作用的混合 DFT 计算表明,具有 sqrt[3]×sqrt[3]结构对称性的绝缘反铁磁结构在能量上优于金属 3×3 结构。结果表明,混合交换相关泛函对自相互作用误差的修正导致了由反铁磁序引起的能带隙打开。结果表明,观察到的绝缘相是通过巡游磁性有序而不是通过迄今为止所接受的通过电子相关的 Mott-Hubbard 机制归因于 Slater 机制。