CdSe 量子点在激子离域配体吸附作用下辐射衰减速率的增强。

Enhanced rate of radiative decay in CdSe quantum dots upon adsorption of an exciton-delocalizing ligand.

机构信息

Department of Chemistry, Northwestern University , 2145 Sheridan Road, Evanston, Illinois 60208-3113, United States.

出版信息

Nano Lett. 2014 Sep 10;14(9):5323-8. doi: 10.1021/nl5023699. Epub 2014 Aug 28.

Abstract

This paper describes the enhancement of the quantum yield of photoluminescence (PL) of CdSe quantum dots (QDs) upon the adsorption of an exciton-delocalizing ligand, phenyldithiocarbamate. Increasing the apparent excitonic radius by only 10% increases the value of the radiative rate constant by a factor of 1.8 and the PL quantum yield by a factor of 2.4. Ligand exchange therefore simultaneously perturbs the confinement energy of charge carriers and enhances the probability of band-edge transitions.

摘要

本文描述了 CdSe 量子点 (QDs) 的光致发光 (PL) 量子产率在吸附外消旋配体苯并二硫代氨基甲酸盐后的增强。仅仅将表观激子半径增加 10%，就使辐射速率常数增加了 1.8 倍，PL 量子产率增加了 2.4 倍。因此，配体交换同时扰乱了载流子的限制能量，并提高了能带边缘跃迁的概率。