具有低交联度的SiN4四面体的镧系掺杂CaLaSiN3中的低能量4f-5d跃迁。

Low energy 4f-5d transitions in lanthanide doped CaLaSiN3 with low degree of cross-linking between SiN4 tetrahedra.

作者信息

ten Kate O M, Hintzen H T, van der Kolk E

机构信息

Section Fundamental Aspects of Materials and Energy, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands. Energy Materials and Devices, Department of Chemical Engineering and Chemistry, Eindhoven University of Technology, Den Dolech 2, 5600 MB Eindhoven, The Netherlands.

出版信息

J Phys Condens Matter. 2014 Sep 24;26(38):385502. doi: 10.1088/0953-8984/26/38/385502. Epub 2014 Sep 4.

DOI:10.1088/0953-8984/26/38/385502

PMID:25186054

Abstract

CaLaSiN3 samples doped with Eu, Yb, Sm, Ce and Pr have been prepared via solid-state reaction synthesis and the optical properties have been studied. Both Yb and Sm were only observed in the trivalent state due to the fact that their Ln(2+) ground states are located inside or very close to the conduction band of the CaLaSiN3 host lattice. Doping with Ce(3+) or Eu(2+) resulted in a very low energy Ce(3+) or Eu(2+) 4f-5d absorption band around 1.9 eV (650 nm) and 1.4 eV (885 nm), respectively. The Ce(3+) 5d-4f emission appeared to be quenched, just as the Eu(2+) 5d-4f emission, which can be explained as the result of auto-ionization.

摘要

通过固态反应合成制备了掺杂铕（Eu）、镱（Yb）、钐（Sm）、铈（Ce）和镨（Pr）的CaLaSiN3样品，并对其光学性质进行了研究。由于Yb和Sm的Ln(2+)基态位于CaLaSiN3主体晶格的导带内部或非常接近导带，因此仅观察到它们处于三价态。掺杂Ce(3+)或Eu(2+)分别导致在1.9 eV（650 nm）和1.4 eV（885 nm）左右出现非常低能量的Ce(3+)或Eu(2+) 4f - 5d吸收带。Ce(3+)的5d - 4f发射似乎被淬灭，Eu(2+)的5d - 4f发射也是如此，这可以解释为自电离的结果。