InGaAs/InAlAs光电导脉冲太赫兹探测器中载流子寿命的影响与调控：6太赫兹带宽与90分贝动态范围

Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range.

作者信息

Dietz Roman J B, Globisch Björn, Roehle Helmut, Stanze Dennis, Göbel Thorsten, Schell Martin

出版信息

Opt Express. 2014 Aug 11;22(16):19411-22. doi: 10.1364/OE.22.019411.

DOI:10.1364/OE.22.019411

Abstract

We investigate the influence of Beryllium (Be) doping on the performance of photoconductive THz detectors based on molecular beam epitaxy (MBE) of low temperature (LT) grown In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As multilayer heterostructures (MLHS). We show how the optical excitation power affects carrier lifetime, detector signal, dynamic range and bandwidth in THz time domain spectroscopy (TDS) in dependence on Be-doping concentration. For optimal doping we measured a THz bandwidth in excess of 6 THz and a dynamic range of up to 90 dB.

摘要

我们研究了铍（Be）掺杂对基于低温（LT）生长的In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As多层异质结构（MLHS）分子束外延（MBE）的光电导太赫兹探测器性能的影响。我们展示了在太赫兹时域光谱（TDS）中，光激发功率如何根据Be掺杂浓度影响载流子寿命、探测器信号、动态范围和带宽。对于最佳掺杂，我们测量到超过6太赫兹的太赫兹带宽和高达90分贝的动态范围。