Swaminathan Srividya, Müschen Markus
J Clin Invest. 2014 Dec;124(12):5095-8. doi: 10.1172/JCI79189. Epub 2014 Nov 10.
Memory B cells are a dynamic subset of the mature B cell population that in some cases can reenter germinal centers (GCs) in response to iterative infections. Such a reactivation can lead to accumulation of genetic lesions in these cells, potentially from repetitive activation of the B cell mutator enzyme AID. Normal memory B cells do not survive repeated reentries into GCs. In this issue, Sungalee et al. demonstrate that memory B cells harboring the oncogenic BCL2:IGH translocation, which results in constitutive BCL2 expression, survive multiple GC entries upon repetitive immunization. Through these multiple GC reentries, the hallmark BCL2:IGH translocation enables AID-induced hypermutation and propagates clonal evolution toward malignant follicular lymphoma.
记忆B细胞是成熟B细胞群体中的一个动态亚群,在某些情况下,它可因反复感染而重新进入生发中心(GCs)。这种再激活会导致这些细胞中遗传损伤的积累,这可能源于B细胞诱变酶AID的反复激活。正常记忆B细胞无法在反复进入生发中心后存活。在本期杂志中,Sungalee等人证明,携带致癌性BCL2:IGH易位(导致BCL2组成性表达)的记忆B细胞在反复免疫后能在多次进入生发中心后存活。通过这些多次生发中心再进入,标志性的BCL2:IGH易位使得AID诱导的高突变发生,并推动克隆进化为恶性滤泡性淋巴瘤。