Hamers R J, Bandy J A, Zhu D, Zhang L
Dept. of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, W 53706, USA.
Faraday Discuss. 2014;172:397-411. doi: 10.1039/c4fd00039k. Epub 2014 Nov 21.
Illumination of diamond with above-bandgap light results in emission of electrons into water and formation of solvated electrons. Here we characterize the materials factors that affect that dynamics of the solvated electrons produced by illumination of niobium substrates and of diamond thin films grown on niobium substrates using transient absorption spectroscopy, and we relate the solvated electron dynamics to the ability to reduce N2 to NH3. For diamond films grown on niobium substrates for different lengths of time, the initial yield of electrons is similar for the different samples, but the lifetime of the solvated electrons increases approximately 10-fold as the film grows. The time-averaged solvated electron concentration and the yield of NH3 produced from N2 both show maxima for films grown for 1-2 hours, with thicknesses of 100-200 nm. Measurements at different values of pH on boron-doped diamond films show that the instantaneous electron emission is nearly independent of pH, but the solvated electron lifetime becomes longer as the pH is increased from pH = 2 to pH = 5. Finally, we also illustrate an important caveat arising from the fact that charge neutrality requires that light-induced emission of electrons from diamond must be accompanied by corresponding oxidation reactions. In situations where the valence band holes cannot readily induce solution-phase oxidation reactions, the diamond itself can be etched by reacting with water to produce CO. Implications for other reactions such as photocatalytic CO2 reduction are discussed, along with strategies for mitigating the potential photo-etching phenomena.
用带隙以上的光照射金刚石会导致电子发射到水中并形成溶剂化电子。在这里,我们使用瞬态吸收光谱法表征了影响由铌衬底以及生长在铌衬底上的金刚石薄膜照射产生的溶剂化电子动力学的材料因素,并将溶剂化电子动力学与将N₂还原为NH₃的能力联系起来。对于在铌衬底上生长不同时间的金刚石薄膜,不同样品的电子初始产率相似,但随着薄膜生长,溶剂化电子的寿命增加了约10倍。对于生长1 - 2小时、厚度为100 - 200 nm的薄膜,时间平均溶剂化电子浓度和由N₂产生的NH₃产率均显示出最大值。在不同pH值下对掺硼金刚石薄膜的测量表明,瞬时电子发射几乎与pH值无关,但随着pH值从pH = 2增加到pH = 5,溶剂化电子寿命变长。最后,我们还说明了一个重要的注意事项,即电荷中性要求金刚石的光致电子发射必须伴随着相应的氧化反应。在价带空穴不易引发溶液相氧化反应的情况下,金刚石本身会与水反应生成CO而被蚀刻。讨论了对其他反应如光催化CO₂还原的影响,以及减轻潜在光蚀刻现象的策略。