Advanced Institute for Materials Research (AIMR), Tohoku University , Sendai 980-8577, Japan.
J Am Chem Soc. 2014 Dec 10;136(49):17201-6. doi: 10.1021/ja509231w. Epub 2014 Nov 27.
Oxide electronics is a promising alternative to the conventional silicon-based semiconductor technology, owing to the rich functionalities of oxide thin films and heterostructures. In contrast to the silicon surface, however, the electronic structure of the SrTiO3 surface, the most important substrate for oxide thin films growth, is not yet completely understood. Here we report on the electronic states of a reconstructed (001) surface of SrTiO3 determined in real space, with scanning tunneling microscopy/spectroscopy and density functional theory calculations. We found a remarkable energy dependence of the spectroscopic image: Theoretical analysis reveals that symmetry breaking at the surface lifts the degeneracy in the t2g state (dxy, dyz, and dzx) of Ti 3d orbitals, whose anisotropic spatial distribution leads to a sharp transition in the spectroscopic image as a function of energy. The knowledge obtained here could be used to gain further insights into emergent phenomena at the surfaces and interfaces with SrTiO3.
氧化物电子学是一种有前途的替代传统的基于硅的半导体技术,这要归功于氧化物薄膜和异质结构的丰富功能。然而,与硅表面不同,对于 SrTiO3 表面(氧化物薄膜生长最重要的衬底)的电子结构,人们还没有完全理解。在这里,我们报告了用扫描隧道显微镜/光谱学和密度泛函理论计算在实空间确定的重构(001)SrTiO3 表面的电子态。我们发现光谱图像具有显著的能量依赖性:理论分析表明,表面的对称破缺消除了 Ti 3d 轨道的 t2g 态(dxy、dyz 和 dzx)的简并性,其各向异性空间分布导致光谱图像在能量函数中发生急剧转变。在这里获得的知识可用于进一步了解具有 SrTiO3 的表面和界面处的新兴现象。