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以在ITO上喷涂的ZnO纳米晶薄膜作为光阳极的染料敏化太阳能电池。

Dye-sensitized solar cell using sprayed ZnO nanocrystalline thin films on ITO as photoanode.

作者信息

Dhamodharan P, Manoharan C, Dhanapandian S, Venkatachalam P

机构信息

Department of Physics, Annamalai University, Annamalai Nagar, Chidambaram 608 002, Tamil Nadu, India.

Department of Physics, Annamalai University, Annamalai Nagar, Chidambaram 608 002, Tamil Nadu, India.

出版信息

Spectrochim Acta A Mol Biomol Spectrosc. 2015 Feb 5;136 Pt C:1671-8. doi: 10.1016/j.saa.2014.10.063. Epub 2014 Oct 24.

Abstract

ZnO thin films had been successfully prepared by spray pyrolysis (SP) technique on ITO/Glass substrates at different substrate temperature in the range 250-400°C using Zinc acetylacetonate as precursor. The X-ray diffraction studies confirmed the hexagonal wurtzite structure with preferred orientation along (002) plane at substrate temperature 350°C and the crystallite size was found to vary from 18 to 47nm. The morphology of the films revealed the porous nature with the roughness value of 8-13nm. The transmittance value was found to vary from 60% to 85% in the visible region depending upon the substrate temperature and the band gap value for the film deposited at 350°C was 3.2eV. The obtained results revealed that the structures and properties of the films were greatly affected by substrate temperature. The near band edge emission observed at 398nm in PL spectra showed better crystallinity. The measured electrical resistivity for ZnO film was ∼3.5×10(-4)Ωcm at the optimized temperature 350°C and was of n-type semiconductor. The obtained porous nature with increased surface roughness of the film and good light absorbing nature of the dye paved way for implementation of quality ZnO in DSSCs fabrication. DSSC were assembled using the prepared ZnO film on ITO coated glass substrate as photoanode and its photocurrent - voltage performance was investigated.

摘要

采用喷雾热解(SP)技术,以乙酰丙酮锌为前驱体,在250 - 400°C的不同衬底温度下,在ITO/玻璃衬底上成功制备了ZnO薄膜。X射线衍射研究证实,在350°C衬底温度下,薄膜为六方纤锌矿结构,择优取向沿(002)面,且微晶尺寸在18至47nm之间变化。薄膜的形貌显示出多孔性质,粗糙度值为8 - 13nm。在可见光区域,透过率值在60%至85%之间变化,具体取决于衬底温度,在350°C沉积的薄膜的带隙值为3.2eV。所得结果表明,薄膜的结构和性能受衬底温度的影响很大。在PL光谱中398nm处观察到的近带边发射表明结晶度更好。在优化温度350°C下,测得的ZnO薄膜的电阻率约为3.5×10(-4)Ωcm,为n型半导体。所获得的薄膜多孔性质、增加的表面粗糙度以及染料良好的光吸收性质为在染料敏化太阳能电池(DSSC)制造中实现高质量的ZnO铺平了道路。使用在ITO涂覆玻璃衬底上制备的ZnO薄膜作为光阳极组装了DSSC,并对其光电流 - 电压性能进行了研究。

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