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振动激发诱导双反应。

Vibrational excitation induces double reaction.

机构信息

Lash Miller Chemical Laboratories, Department of Chemistry and Institute of Optical Sciences, University of Toronto , 80 St. George Street, Toronto, Ontario M5S SH6, Canada .

出版信息

ACS Nano. 2014 Dec 23;8(12):12468-75. doi: 10.1021/nn5053074. Epub 2014 Dec 12.

Abstract

Electron-induced reaction at metal surfaces is currently the subject of extensive study. Here, we broaden the range of experimentation to a comparison of vibrational excitation with electronic excitation, for reaction of the same molecule at the same clean metal surface. In a previous study of electron-induced reaction by scanning tunneling microscopy (STM), we examined the dynamics of the concurrent breaking of the two C-I bonds of ortho-diiodobenzene physisorbed on Cu(110). The energy of the incident electron was near the electronic excitation threshold of E0=1.0 eV required to induce this single-electron process. STM has been employed in the present work to study the reaction dynamics at the substantially lower incident electron energies of 0.3 eV, well below the electronic excitation threshold. The observed increase in reaction rate with current was found to be fourth-order, indicative of multistep reagent vibrational excitation, in contrast to the first-order rate dependence found earlier for electronic excitation. The change in mode of excitation was accompanied by altered reaction dynamics, evidenced by a different pattern of binding of the chemisorbed products to the copper surface. We have modeled these altered reaction dynamics by exciting normal modes of vibration that distort the C-I bonds of the physisorbed reagent. Using the same ab initio ground potential-energy surface as in the prior work on electronic excitation, but with only vibrational excitation of the physisorbed reagent in the asymmetric stretch mode of C-I bonds, we obtained the observed alteration in reaction dynamics.

摘要

目前,电子在金属表面上的诱导反应是广泛研究的课题。在这里,我们将实验范围扩大到比较相同分子在相同清洁金属表面上的振动激发与电子激发。在之前通过扫描隧道显微镜(STM)研究电子诱导反应的研究中,我们研究了吸附在 Cu(110)上的邻二碘苯的两个 C-I 键同时断裂的动力学。入射电子的能量接近电子激发阈值 E0=1.0 eV,这是诱导这个单电子过程所需的能量。STM 已在本工作中用于研究电子能量明显低于电子激发阈值 0.3 eV 的反应动力学。发现反应速率随电流的增加呈四阶,表明试剂振动激发的多步,与之前电子激发的一阶速率依赖性形成对比。激发方式的变化伴随着反应动力学的改变,这可以通过化学吸附产物与铜表面的不同结合模式来证明。我们通过激发物理吸附试剂的 C-I 键的简正模式来模拟这些改变的反应动力学。使用与之前关于电子激发的工作相同的从头算基态势能面,但仅对物理吸附试剂的不对称伸缩模式中的 C-I 键进行振动激发,我们得到了观察到的反应动力学的改变。

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