Yu Gui-Feng, Pan Wei, Yu Miao, Han Wen-Peng, Zhang Jun-Cheng, Zhang Hong-Di, Long Yun-Ze
Collaborative Innovation Center for Low-Dimensional Nanomaterials and Optoelectronic Devices, Qingdao University, Qingdao 266071, People's Republic of China. College of Physics, Qingdao University, Qingdao 266071, People's Republic of China. College of Science and Information, Qingdao Agricultural University, Qingdao 266109, People's Republic of China.
Nanotechnology. 2015 Jan 30;26(4):045703. doi: 10.1088/0957-4484/26/4/045703. Epub 2015 Jan 5.
Conducting polypyrrole (PPY) nanowires doped with p-toluene sulfonamide (PTSA) were synthesized by a template-free self-assembly method. Electrical transport characteristics, i.e. current-voltage (I-V) behavior, of an individual PPY/PTSA nanowire have been explored in a wide temperature range from 300 down to 40 K. The fitting results of I-V curves indicated that the electrical conduction mechanism can be explained by the space-charge-limited current (SCLC) theory from 300 down to 100 K. In this temperature range, traps play an important role for this non-crystalline system. The corresponding trap energy and trap concentration have also been calculated based on the SCLC theory. Interestingly, there is no trap at 160 K, different from other temperatures. The obtained carrier mobility for the polymer nanowires is 0.964 cm(2) V(-1) s(-1) on the basis of trap free SCLC theory. In the temperature range of 80-40 K, little current can flow through the nanowire especially at lower voltages, however, the current follows the equation I ∞ (V/Vt-1)(ζ) at higher bias, which could be attributed to Coulomb blockade effect. Additionally, the differential conductance dI/dV curves also show some clear Coulomb oscillations.
采用无模板自组装法合成了掺杂对甲苯磺酰胺(PTSA)的导电聚吡咯(PPY)纳米线。在300K至40K的宽温度范围内研究了单根PPY/PTSA纳米线的电输运特性,即电流-电压(I-V)行为。I-V曲线的拟合结果表明,从300K到100K,其导电机制可用空间电荷限制电流(SCLC)理论来解释。在此温度范围内,陷阱对这个非晶系统起着重要作用。还基于SCLC理论计算了相应的陷阱能量和陷阱浓度。有趣的是,与其他温度不同,在160K时没有陷阱。基于无陷阱SCLC理论,得到的聚合物纳米线的载流子迁移率为0.964 cm²V⁻¹s⁻¹。在80K至40K的温度范围内,尤其是在较低电压下,几乎没有电流能流过纳米线,然而,在较高偏压下,电流遵循方程I ∞ (V/Vt - 1)ζ,这可能归因于库仑阻塞效应。此外,微分电导dI/dV曲线也显示出一些明显的库仑振荡。