用于波分复用无源光网络（WDM-PON）的电吸收调制宽可调谐分布布拉格反射（DBR）激光发射器。

Electroabsorption-modulated widely tunable DBR laser transmitter for WDM-PONs.

作者信息

Han Liangshun, Liang Song, Wang Huitao, Qiao Lijun, Xu Junjie, Zhao Lingjuan, Zhu Hongliang, Wang Baojun, Wang Wei

出版信息

Opt Express. 2014 Dec 1;22(24):30368-76. doi: 10.1364/OE.22.030368.

DOI:10.1364/OE.22.030368

Abstract

We present an InP based distributed Bragg reflector (DBR) laser transmitter which has a wide wavelength tuning range and a high chip output power for wavelength division multiplexing passive optical network (WDM-PON) applications. By butt-jointing InGaAsP with 1.45 µm emission wavelength as the material of the grating section, the laser wavelength can be tuned for over 13 nm by the DBR current. Accompanied by varying the chip temperature, the tuning range can be further enlarged to 16 nm. With the help of the integrated semiconductor optical amplifier (SOA), the largest chip output power is over 30 mW. The electroabsorption modulator (EAM) is integrated into the device by the selective-area growth (SAG) technique. The 3 dB small signal modulation bandwidth of the EAM is over 13 GHz. The device has both a simple tuning scheme and a simple fabrication procedure, making it suitable for low cost massive production which is desirable for WDM-PON uses.

摘要

我们展示了一种基于磷化铟的分布式布拉格反射器（DBR）激光发射器，它具有宽波长调谐范围和高芯片输出功率，适用于波分复用无源光网络（WDM-PON）应用。通过将发射波长为1.45μm的铟镓砷磷作为光栅部分的材料进行对接，DBR电流可使激光波长调谐超过13nm。随着芯片温度的变化，调谐范围可进一步扩大到16nm。借助集成半导体光放大器（SOA），最大芯片输出功率超过30mW。通过选择性区域生长（SAG）技术将电吸收调制器（EAM）集成到该器件中。EAM的3dB小信号调制带宽超过13GHz。该器件具有简单的调谐方案和简单的制造工艺，使其适用于低成本大规模生产，这对于WDM-PON应用来说是很理想的。