Size-dependent optical absorption modulation of Si/Ge and Ge/Si core/shell nanowires with different cross-sectional geometries.

We present an atomic-level and quantitative study of the absorption properties in Si/Ge and Ge/Si core/shell nanowires (CSNWs) along [110] direction with different cross-sectional geometries using the atomic bond relaxation method. We find that the strain existing in self-equilibrium state of CSNWs and associated with elastic energy originating from interface mismatch and surface relaxation affect the band shift and absorption properties. Compared to the CSNWs with tetragonal, hexagonal and circular shapes, the triangular CSNWs have the largest band gap shift at a fixed strain and the smallest absorption coefficient at a determinate incident light wavelength. The tunable absorption property, realized by controlling the size and geometry structure, could be helpful for nanoelectronic applications.