Zhao Minhua, Ming Bin, Kim Jae-Woo, Gibbons Luke J, Gu Xiaohong, Nguyen Tinh, Park Cheol, Lillehei Peter T, Villarrubia J S, Vladár András E, Alexander Liddle J
Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, USA. University of Maryland, Department of Materials Science and Engineering, College Park, USA.
Nanotechnology. 2015 Feb 27;26(8):085703. doi: 10.1088/0957-4484/26/8/085703. Epub 2015 Feb 4.
Despite many studies of subsurface imaging of carbon nanotube (CNT)-polymer composites via scanning electron microscopy (SEM), significant controversy exists concerning the imaging depth and contrast mechanisms. We studied CNT-polyimide composites and, by three-dimensional reconstructions of captured stereo-pair images, determined that the maximum SEM imaging depth was typically hundreds of nanometers. The contrast mechanisms were investigated over a broad range of beam accelerating voltages from 0.3 to 30 kV, and ascribed to modulation by embedded CNTs of the effective secondary electron (SE) emission yield at the polymer surface. This modulation of the SE yield is due to non-uniform surface potential distribution resulting from current flows due to leakage and electron beam induced current. The importance of an external electric field on SEM subsurface imaging was also demonstrated. The insights gained from this study can be generally applied to SEM nondestructive subsurface imaging of conducting nanostructures embedded in dielectric matrices such as graphene-polymer composites, silicon-based single electron transistors, high resolution SEM overlay metrology or e-beam lithography, and have significant implications in nanotechnology.
尽管通过扫描电子显微镜(SEM)对碳纳米管(CNT)-聚合物复合材料进行了许多地下成像研究,但在成像深度和对比度机制方面仍存在重大争议。我们研究了CNT-聚酰亚胺复合材料,并通过对捕获的立体对图像进行三维重建,确定SEM的最大成像深度通常为数百纳米。在0.3至30 kV的宽束加速电压范围内研究了对比度机制,并将其归因于聚合物表面嵌入的CNT对有效二次电子(SE)发射产率的调制。SE产率的这种调制是由于泄漏和电子束感应电流引起的电流流动导致的表面电位分布不均匀。还证明了外部电场对SEM地下成像的重要性。从这项研究中获得的见解通常可应用于对嵌入介电基质中的导电纳米结构进行SEM无损地下成像,例如石墨烯-聚合物复合材料、硅基单电子晶体管、高分辨率SEM叠加计量或电子束光刻,并且在纳米技术中具有重要意义。