铁电隧道结中的非常规电阻开关行为。

Unconventional resistive switching behavior in ferroelectric tunnel junctions.

作者信息

Mao H J, Song C, Xiao L R, Gao S, Cui B, Peng J J, Li F, Pan F

机构信息

School of Materials Science and Engineering, Central South University, Changsha 410083, China.

出版信息

Phys Chem Chem Phys. 2015 Apr 21;17(15):10146-50. doi: 10.1039/c5cp00421g.

DOI:10.1039/c5cp00421g

PMID:25789877

Abstract

We investigate an unconventional resistive switching (RS) behavior in La0.67Sr0.33MnO3/BaTiO3/metal (LSMO/BTO) ferroelectric tunnel junctions (FTJs), which is dominated by the variation of the barrier potential profile modulated by the migration of oxygen vacancies in the p-LSMO/n-BTO junction. The LSMO/BTO/Co junction exhibits a remarkable self-rectifying effect ascribed to the high-density interface state at the BTO/Co interface, in contrast to the symmetric conductivity when the top metal electrode is inert Pt. The effects of ferroelectric polarization on the RS behavior are also emphasized. Our work builds a bridge between FTJs and resistive random access memory devices.

摘要

我们研究了La0.67Sr0.33MnO3/BaTiO3/金属（LSMO/BTO）铁电隧道结（FTJs）中的一种非常规电阻开关（RS）行为，这种行为由p-LSMO/n-BTO结中氧空位迁移调制的势垒电位分布变化主导。与顶部金属电极是惰性Pt时的对称导电性相比，LSMO/BTO/Co结由于BTO/Co界面处的高密度界面态而表现出显著的自整流效应。还强调了铁电极化对RS行为的影响。我们的工作在铁电隧道结和电阻式随机存取存储器器件之间架起了一座桥梁。