Ghazaryan Areg, Chakraborty Tapash, Pietiläinen Pekka
Department of Physics and Astronomy, University of Manitoba, Winnipeg, MB R3T 2N2, Canada.
J Phys Condens Matter. 2015 May 13;27(18):185301. doi: 10.1088/0953-8984/27/18/185301. Epub 2015 Apr 20.
We report on the influence of a periodic potential on the fractional quantum Hall effect (FQHE) states in monolayer graphene. We have shown that for two values of the magnetic flux per unit cell (one-half and one-third flux quantum) an increase of the periodic potential strength results in a closure of the FQHE gap and appearance of gaps due to the periodic potential. In the case of one-half flux quantum this causes a change of the ground state and consequently the change of the momentum of the system in the ground state. While there is also crossing between low-lying energy levels for one-third flux quantum, the ground state does not change with the increase of the periodic potential strength and is always characterized by the same momentum. Finally, it is shown that for one-half flux quantum the emergent gaps are due entirely to the electron-electron interaction, whereas for the one-third flux quantum per unit cell these are due to both non-interacting electrons (Hofstadter butterfly pattern) and the electron-electron interaction.
我们报道了周期性势对单层石墨烯中分数量子霍尔效应(FQHE)态的影响。我们已经表明,对于每单位晶胞磁通量的两个值(二分之一和三分之一磁通量子),周期性势强度的增加会导致FQHE能隙的闭合以及由于周期性势而出现能隙。在二分之一磁通量子的情况下,这会导致基态的变化,进而导致系统在基态下动量的变化。虽然对于三分之一磁通量子,低能态之间也存在交叉,但基态不会随着周期性势强度的增加而改变,并且始终由相同的动量表征。最后,结果表明,对于二分之一磁通量子,出现的能隙完全归因于电子 - 电子相互作用,而对于每单位晶胞三分之一磁通量子,这些能隙则归因于非相互作用电子(霍夫施塔特蝴蝶图案)和电子 - 电子相互作用两者。