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本文引用的文献

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Linear electro-optic properties of relaxor-based ferroelectric 0.24Pb(InNb)O-(0.76 - )Pb(MgNb)O-PbTiO single crystals.

J Appl Phys. 2013 Jul 14;114(2):27021. doi: 10.1063/1.4811811. Epub 2013 Jul 10.

2

Reduction of electro-optic half-wave voltage of 0.93Pb(Zn(1/3)Nb(2/3))O(3)-0.07PbTiO(3) single crystal through large piezoelectric strain.

Opt Mater (Amst). 2011 Jan 1;33(3):549-552. doi: 10.1016/j.optmat.2010.10.047.

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四方弛豫铁电体-钛酸铅（PT）铁电单晶中电光和压电耦合效应的优化

Optimization of electrooptic and pieozoelectric coupling effects in tetragonal relaxor-PT ferroelectric single crystals.

作者信息

Sun Enwei, Sang Shijing, Yuan Zhongyuan, Qi Xudong, Zhang Rui, Cao Wenwu

机构信息

Condensed Matter Science and Technology Institute, Harbin Institute of Technology, Harbin 150080, China.

Condensed Matter Science and Technology Institute, Harbin Institute of Technology, Harbin 150080, China ; Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.

出版信息

J Alloys Compd. 2015 Aug 15;640:64-67. doi: 10.1016/j.jallcom.2015.04.006.

DOI:10.1016/j.jallcom.2015.04.006

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4418213/

Abstract

The electrooptic and piezoelectric coupling effects in tetragonal relaxor-based ferroelectric 0.62Pb(MgNb)O-0.38PbTiO (PMN-0.38PT) and 0.88Pb(ZnNb)O-0.12PbTiO (PZN-0.12PT) single-domain crystals have been analyzed by the coordinate transformation. The orientation dependence of the electrooptic and half-wave voltage was calculated based on the full sets of refractive indices, electrooptic and piezoelectric coefficients. The optimum orientation cuts for achieving the best electrooptic coefficient and half-wave voltage were found. The lowset half-wave voltage is only 76 V for the PMN-0.38PT single-domain crystal. Compared to commonly used electrooptic crystal LiNbO, tetragonal relaxor-PT ferroelectric single-domain crystals are much superior for optical modulation applications because of their much higher linear electrooptic coefficients and substantially lower half-wave voltages when the piezoelectric strain influence is considered.

摘要

通过坐标变换分析了四方弛豫铁电体0.62Pb(MgNb)O-0.38PbTiO（PMN-0.38PT）和0.88Pb(ZnNb)O-0.12PbTiO（PZN-0.12PT）单畴晶体中的电光和压电耦合效应。基于完整的折射率、电光和压电系数集，计算了电光和半波电压的取向依赖性。找到了实现最佳电光系数和半波电压的最佳取向切割。对于PMN-0.38PT单畴晶体，最低半波电压仅为76V。与常用的电光晶体LiNbO相比，四方弛豫铁电体-PT单畴晶体在光调制应用中具有更大优势，因为考虑到压电应变影响时，它们具有更高的线性电光系数和更低的半波电压。