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石英中辐射诱导缺陷的性质。

Nature of radiation-induced defects in quartz.

作者信息

Wang Bu, Yu Yingtian, Pignatelli Isabella, Sant Gaurav, Bauchy Mathieu

机构信息

Physics of Amorphous and Inorganic Solids Laboratory (PARISlab), Department of Civil and Environmental Engineering, University of California, Los Angeles, California 90095, USA.

Laboratory for the Chemistry of Construction Materials (LC), Department of Civil and Environmental Engineering, University of California, Los Angeles, California 90095, USA.

出版信息

J Chem Phys. 2015 Jul 14;143(2):024505. doi: 10.1063/1.4926527.

Abstract

Although quartz (α-form) is a mineral used in numerous applications wherein radiation exposure is an issue, the nature of the atomistic defects formed during radiation-induced damage has not been fully clarified. Especially, the extent of oxygen vacancy formation is still debated, which is an issue of primary importance as optical techniques based on charged oxygen vacancies have been utilized to assess the level of radiation damage in quartz. In this paper, molecular dynamics simulations are applied to study the effects of ballistic impacts on the atomic network of quartz. We show that the defects that are formed mainly consist of over-coordinated Si and O, as well as Si-O connectivity defects, e.g., small Si-O rings and edge-sharing Si tetrahedra. Oxygen vacancies, on the contrary, are found in relatively low abundance, suggesting that characterizations based on E' centers do not adequately capture radiation-induced structural damage in quartz. Finally, we evaluate the dependence on the incident energy, of the amount of each type of the point defects formed, and quantify unambiguously the threshold displacement energies for both O and Si atoms. These results provide a comprehensive basis to assess the nature and extent of radiation damage in quartz.

摘要

尽管石英(α 型)是一种在众多存在辐射暴露问题的应用中使用的矿物,但辐射诱导损伤过程中形成的原子缺陷的性质尚未完全阐明。特别是,氧空位形成的程度仍存在争议,这是一个至关重要的问题,因为基于带电氧空位的光学技术已被用于评估石英中的辐射损伤水平。在本文中,应用分子动力学模拟来研究弹道撞击对石英原子网络的影响。我们表明,形成的缺陷主要由配位过度的 Si 和 O 以及 Si - O 连接性缺陷组成,例如小的 Si - O 环和共边 Si 四面体。相反,发现氧空位的丰度相对较低,这表明基于 E' 中心的表征不能充分捕捉石英中辐射诱导的结构损伤。最后,我们评估了每种类型点缺陷形成量对入射能量的依赖性,并明确量化了 O 和 Si 原子的阈值位移能量。这些结果为评估石英中辐射损伤的性质和程度提供了全面的基础。

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