Joint Quantum Institute, University of Maryland, College Park, Maryland 20742, USA and National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
Phys Rev Lett. 2015 Jun 5;114(22):226803. doi: 10.1103/PhysRevLett.114.226803. Epub 2015 Jun 4.
We present an approach for entangling electron spin qubits localized on spatially separated impurity atoms or quantum dots via a multielectron, two-level quantum dot. The effective exchange interaction mediated by the dot can be understood as the simplest manifestation of Ruderman-Kittel-Kasuya-Yosida exchange, and can be manipulated through gate voltage control of level splittings and tunneling amplitudes within the system. This provides both a high degree of tunability and a means for realizing high-fidelity two-qubit gates between spatially separated spins, yielding an experimentally accessible method of coupling donor electron spins in silicon via a hybrid impurity-dot system.
我们提出了一种通过多电子、双能级量子点来纠缠局域在空间分离的杂质原子或量子点上的电子自旋量子比特的方法。由量子点介导的有效交换相互作用可以理解为 Ruderman-Kittel-Kasuya-Yosida 交换的最简单表现形式,并可以通过系统内能级分裂和隧道幅度的栅极电压控制来操纵。这不仅提供了高度的可调性,而且还为实现空间分离自旋之间的高保真度双量子比特门提供了一种手段,从而通过混合杂质-量子点系统来实现硅中施主电子自旋的耦合,这是一种实验上可实现的方法。