异常波会导致氮化镓半导体的不稳定性。
Rogue waves lead to the instability in GaN semiconductors.
作者信息
Yahia M E, Tolba R E, El-Bedwehy N A, El-Labany S K, Moslem W M
机构信息
1] Faculty of Engineering and Natural Sciences, International University of Sarajevo (IUS), 71210, Ilidža, Sarajevo, Bosnia and Herzegovina [2] Center for Theoretical Physics, The British University in Egypt (BUE), El-Shorouk City, Cairo 11837, Egypt.
Department of Mathematics, Faculty of Science, Damietta University, New Damietta, 34517, Egypt.
出版信息
Sci Rep. 2015 Jul 24;5:12245. doi: 10.1038/srep12245.
A new approach to understand the electron/hole interfaced plasma in GaN high electron mobility transistors (HEMTs). A quantum hydrodynamic model is constructed to include electrons/holes degenerate pressure, Bohm potential, and the exchange/correlation effect and then reduced to the nonlinear Schrödinger equation (NLSE). Numerical analysis of the latter predicts the rough (in)stability domains, which allow for the rogue waves to occur. Our results might give physical solution rather than the engineering one to the intrinsic problems in these high frequency/power transistors.
一种理解氮化镓高电子迁移率晶体管（HEMTs）中电子/空穴界面等离子体的新方法。构建了一个量子流体动力学模型，其中包括电子/空穴简并压力、玻姆势以及交换/关联效应，然后将其简化为非线性薛定谔方程（NLSE）。对后者的数值分析预测了粗糙的（不）稳定域，这使得 rogue 波能够出现。我们的结果可能会为这些高频/功率晶体管中的固有问题提供物理解决方案而非工程解决方案。
Zotero 插件