Peters Andrew J, Lawson Richard A, Nation Benjamin D, Ludovice Peter J, Henderson Clifford L
School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA, 311 Ferst Drive NW, Atlanta, GA 30332-0100, USA.
Nanotechnology. 2015 Sep 25;26(38):385301. doi: 10.1088/0957-4484/26/38/385301. Epub 2015 Sep 3.
A coarse-grained molecular dynamics model was used to study the thin film self-assembly and resulting pattern properties of block copolymer (BCP) systems with various molar mass dispersities. Diblock copolymers (i.e. A-b-B type) were simulated in an aligned lamellar state, which is one of the most common patterns of potential use for integrated circuit fabrication via directed self-assembly of BCPs. Effects of the molar mass dispersity (Ð) on feature pitch and interfacial roughness, which are critical lithographic parameters that have a direct impact on integrated circuit performance, were simulated. It was found that for a realistic distribution of polymer molecular weights, modeled by a Wesslau distribution, both line edge roughness (LER) and line width roughness (LWR) increase approximately linearly with increasing Ð, up to ∼45% of the monodisperse value at Ð = 1.5. Mechanisms of compensation for increased A-A and B-B roughness were considered. It was found that long and short chain positions were not correlated, and that long chains were significantly deformed in shape. The increase in LWR was due to the increase in LER and a constant correlation between the line edges. Unaligned systems show a correlation between domain width and local molecular weight, while systems aligned on an alternating pattern of A and B lines did not show any correlation. When the volume fraction of individual chains was allowed to vary, similar results were found when considering the Ð of the block as opposed to the Ð of the entire system.
使用粗粒度分子动力学模型研究了具有不同摩尔质量分散度的嵌段共聚物(BCP)体系的薄膜自组装及其形成的图案特性。对二嵌段共聚物(即A-b-B型)在取向层状状态下进行了模拟,这是通过BCP的定向自组装用于集成电路制造的最常见图案之一。模拟了摩尔质量分散度(Ð)对特征间距和界面粗糙度的影响,这两个关键光刻参数直接影响集成电路性能。结果发现,对于由韦氏分布模拟的聚合物分子量的实际分布,线边缘粗糙度(LER)和线宽粗糙度(LWR)均随Ð的增加近似线性增加,在Ð = 1.5时达到单分散值的约45%。考虑了对增加的A-A和B-B粗糙度的补偿机制。结果发现,长链和短链位置不相关,且长链形状发生了显著变形。LWR的增加是由于LER的增加以及线边缘之间的恒定相关性。未取向体系显示出畴宽度与局部分子量之间的相关性,而在A和B线交替图案上取向的体系则未显示出任何相关性。当允许单个链的体积分数变化时,在考虑嵌段的Ð而不是整个体系的Ð时发现了类似的结果。