Thenuwara Akila C, Shumlas Samantha L, Attanayake Nuwan H, Cerkez Elizabeth B, McKendry Ian G, Frazer Laszlo, Borguet Eric, Kang Qing, Zdilla Michael J, Sun Jianwei, Strongin Daniel R
Department of Chemistry, Temple University , Beury Hall, 1901 North 13th Street, Philadelphia, Pennsylvania 19122, United States.
Center for Computational Design of Functional Layered Materials (CCDM), Temple University , Philadelphia, Pennsylvania 19122, United States.
Langmuir. 2015 Nov 24;31(46):12807-13. doi: 10.1021/acs.langmuir.5b02936. Epub 2015 Nov 2.
We report a synthetic method to increase the catalytic activity of birnessite toward water oxidation by intercalating copper in the interlayer region of the layered manganese oxide. Intercalation of copper, verified by XRD, XPS, ICP, and Raman spectroscopy, was accomplished by exposing a suspension of birnessite to a Cu(+)-bearing precursor molecule that underwent disproportionation in solution to yield Cu(0) and Cu(2+). Electrocatalytic studies showed that the Cu-modified birnessite exhibited an overpotential for water oxidation of ∼490 mV (at 10 mA/cm(2)) and a Tafel slope of 126 mV/decade compared to ∼700 mV (at 10 mA/cm(2)) and 240 mV/decade, respectively, for birnessite without copper. Impedance spectroscopy results suggested that the charge transfer resistivity of the Cu-modified sample was significantly lower than Cu-free birnessite, suggesting that Cu in the interlayer increased the conductivity of birnessite leading to an enhancement of water oxidation kinetics. Density functional theory calculations show that the intercalation of Cu(0) into a layered MnO2 model structure led to a change of the electronic properties of the material from a semiconductor to a metallic-like structure. This conclusion from computation is in general agreement with the aforementioned impedance spectroscopy results. X-ray photoelectron spectroscopy (XPS) showed that Cu(0) coexisted with Cu(2+) in the prepared Cu-modified birnessite. Control experiments using birnessite that was decorated with only Cu(2+) showed a reduction in water oxidation kinetics, further emphasizing the importance of Cu(0) for the increased activity of birnessite. The introduction of Cu(0) into the birnessite structure also increased the stability of the electrocatalyst. At a working current of 2 mA, the Cu-modified birnessite took ∼3 times longer for the overpotential for water oxdiation to increase by 100 mV compared to when Cu was not present in the birnessite.
我们报道了一种通过在层状氧化锰的层间区域嵌入铜来提高水钠锰矿对水氧化催化活性的合成方法。通过XRD、XPS、ICP和拉曼光谱验证了铜的嵌入,其过程是将水钠锰矿悬浮液暴露于含Cu(+)的前体分子中,该分子在溶液中发生歧化反应生成Cu(0)和Cu(2+)。电催化研究表明,与不含铜的水钠锰矿相比,Cu改性的水钠锰矿在水氧化时的过电位约为490 mV(在10 mA/cm²时),塔菲尔斜率为126 mV/十倍,而不含铜的水钠锰矿在10 mA/cm²时的过电位约为700 mV,塔菲尔斜率为240 mV/十倍。阻抗谱结果表明,Cu改性样品的电荷转移电阻显著低于不含铜的水钠锰矿,这表明层间的铜提高了水钠锰矿的导电性,从而增强了水氧化动力学。密度泛函理论计算表明,将Cu(0)嵌入层状MnO₂模型结构会导致材料的电子性质从半导体变为类金属结构。这一计算得出的结论与上述阻抗谱结果总体一致。X射线光电子能谱(XPS)表明,在制备的Cu改性水钠锰矿中,Cu(0)与Cu(2+)共存。使用仅用Cu(2+)修饰的水钠锰矿进行的对照实验表明水氧化动力学降低,进一步强调了Cu(0)对提高水钠锰矿活性的重要性。将Cu(0)引入水钠锰矿结构还提高了电催化剂的稳定性。在2 mA的工作电流下,与水钠锰矿中不存在Cu时相比,Cu改性的水钠锰矿水氧化过电位增加100 mV所需的时间约长3倍。