Curran P J, Desoky W M, Milosević M V, Chaves A, Laloë J-B, Moodera J S, Bending S J
University of Bath, Department of Physics, Bath, BA2 7AY, UK.
University of Zagazig, Department of Physics, Ash Sharqiyah, Egypt.
Sci Rep. 2015 Oct 23;5:15569. doi: 10.1038/srep15569.
Scanning Hall probe microscopy (SHPM) has been used to study vortex structures in thin epitaxial films of the superconductor MgB2. Unusual vortex patterns observed in MgB2 single crystals have previously been attributed to a competition between short-range repulsive and long-range attractive vortex-vortex interactions in this two band superconductor; the type 1.5 superconductivity scenario. Our films have much higher levels of disorder than bulk single crystals and therefore both superconducting condensates are expected to be pushed deep into the type 2 regime with purely repulsive vortex interactions. We observe broken symmetry vortex patterns at low fields in all samples after field-cooling from above Tc. These are consistent with those seen in systems with competing repulsions on disparate length scales, and remarkably similar structures are reproduced in dirty two band Ginzburg-Landau calculations, where the simulation parameters have been defined by experimental observations. This suggests that in our dirty MgB2 films, the symmetry of the vortex structures is broken by the presence of vortex repulsions with two different lengthscales, originating from the two distinct superconducting condensates. This represents an entirely new mechanism for spontaneous symmetry breaking in systems of superconducting vortices, with important implications for pinning phenomena and high current density applications.
扫描霍尔探针显微镜(SHPM)已被用于研究超导材料MgB₂外延薄膜中的涡旋结构。此前在MgB₂单晶中观察到的异常涡旋图案,被归因于这种两能带超导体中短程排斥和长程吸引涡旋-涡旋相互作用之间的竞争;即1.5型超导情形。我们的薄膜比块状单晶具有更高的无序度,因此预计两种超导凝聚体都将被推向具有纯排斥涡旋相互作用的2型区域。在从高于Tc的温度进行场冷后,我们在所有样品的低场中都观察到了对称性破缺的涡旋图案。这些与在不同长度尺度上具有竞争排斥的系统中所观察到的图案一致,并且在脏两能带金兹堡-朗道计算中再现了非常相似的结构,其中模拟参数是由实验观测定义的。这表明在我们的脏MgB₂薄膜中,涡旋结构的对称性被两种不同长度尺度的涡旋排斥所打破,这两种排斥源于两种不同的超导凝聚体。这代表了超导涡旋系统中自发对称性破缺的一种全新机制,对钉扎现象和高电流密度应用具有重要意义。