Berski Fabian, Hübner Jens, Oestreich Michael, Ludwig Arne, Wieck A D, Glazov Mikhail
Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, D-30167 Hannover, Germany.
Angewandte Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany.
Phys Rev Lett. 2015 Oct 23;115(17):176601. doi: 10.1103/PhysRevLett.115.176601. Epub 2015 Oct 20.
We present spin-noise spectroscopy measurements on an ensemble of donor-bound electrons in ultrapure GaAs:Si covering temporal dynamics over 6 orders of magnitude from milliseconds to nanoseconds. The spin-noise spectra detected at the donor-bound exciton transition show the multifaceted dynamical regime of the ubiquitous mutual electron and nuclear spin interaction typical for III-V-based semiconductor systems. The experiment distinctly reveals the finite Overhauser shift of an electron spin precession at zero external magnetic field and a second contribution around zero frequency stemming from the electron spin components parallel to the nuclear spin fluctuations. Moreover, at very low frequencies, features related with time-dependent nuclear spin fluctuations are clearly resolved making it possible to study the intricate nuclear spin dynamics at zero and low magnetic fields. The findings are in agreement with the developed model of electron and nuclear spin noise.
我们展示了对超纯GaAs:Si中施主束缚电子系综的自旋噪声光谱测量,测量覆盖了从毫秒到纳秒的6个数量级的时间动态。在施主束缚激子跃迁处检测到的自旋噪声光谱显示了基于III-V族半导体系统中普遍存在的电子与核自旋相互作用的多方面动力学机制。该实验清楚地揭示了在零外磁场下电子自旋进动的有限奥弗豪泽频移,以及源于与核自旋涨落平行的电子自旋分量的零频率附近的第二种贡献。此外,在非常低的频率下,可以清楚地分辨出与时间相关的核自旋涨落相关的特征,从而有可能研究零磁场和低磁场下复杂的核自旋动力学。这些发现与所建立的电子和核自旋噪声模型一致。