Bundesanstalt für Materialforschung und -prüfung (BAM) , Unter den Eichen 87, 12205 Berlin, Germany.
Anal Chem. 2016 Jan 19;88(2):1210-7. doi: 10.1021/acs.analchem.5b03468. Epub 2016 Jan 4.
The quantitative determination of surface functional groups is approached in a straightforward laboratory-based method with high reliability. The application of a multimode BODIPY-type fluorescence, photometry, and X-ray photoelectron spectroscopy (XPS) label allows estimation of the labeling ratio, i.e., the ratio of functional groups carrying a label after reaction, from the elemental ratios of nitrogen and fluorine. The amount of label on the surface is quantified with UV/vis spectrophotometry based on the molar absorption coefficient as molecular property. The investigated surfaces with varying density are prepared by codeposition of 3-(aminopropyl)triethoxysilane (APTES) and cyanoethyltriethoxysilane (CETES) from vapor. These surfaces show high functional group densities that result in significant fluorescence quenching of surface-bound labels. Since alternative quantification of the label on the surface is available through XPS and photometry, a novel method to quantitatively account for fluorescence quenching based on fluorescence lifetime (τ) measurements is shown. Due to the complex distribution of τ on high-density surfaces, the stretched exponential (or Kohlrausch) function is required to determine representative mean lifetimes. The approach is extended to a commercial Rhodamine B isothiocyanate (RITC) label, clearly revealing the problems that arise from such charged labels used in conjunction with silane surfaces.
本文提出了一种基于实验室的可靠方法,用于定量测定表面官能团。该方法使用多模式 BODIPY 型荧光光度法和 X 射线光电子能谱(XPS)标记物,可以根据氮和氟的元素比估算标记比,即反应后带有标记的官能团的比例。通过基于摩尔吸光系数的紫外/可见分光光度法,利用分子特性定量测定表面的标记量。通过蒸汽共沉积 3-(氨丙基)三乙氧基硅烷(APTES)和氰乙基三乙氧基硅烷(CETES)来制备具有不同密度的表面,这些表面具有高官能团密度,导致表面结合标记物的荧光猝灭显著。由于通过 XPS 和光度法可以对表面上的标记进行替代定量,因此提出了一种基于荧光寿命(τ)测量定量考虑荧光猝灭的新方法。由于在高密度表面上τ的复杂分布,需要使用扩展指数(或 Kohlrausch)函数来确定有代表性的平均寿命。该方法扩展到一种商业的罗丹明 B 异硫氰酸酯(RITC)标记物,该方法清楚地揭示了与硅烷表面一起使用的带电荷标记物所带来的问题。