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底物对二维材料非线性光学响应的影响。

Effects of substrates on the nonlinear optical responses of two-dimensional materials.

作者信息

Zeng Jianhua, Li Jinxiang, Li Hui, Dai Qiaofeng, Tie Shaolong, Lan Sheng

出版信息

Opt Express. 2015 Dec 14;23(25):31817-27. doi: 10.1364/OE.23.031817.

Abstract

We investigated numerically and experimentally the achievement of strongly localized electric field and significantly enhanced second harmonic generation (SHG) in two-dimensional (2D) materials by using dielectric-metal hybrid substrates. Based on the theory of thin film interference, it was revealed that the strongest localization of electric field in a 2D material, which corresponds to the largest absorption in the metal film, could be achieved by minimizing the reflection of the combined structure (i.e., 2D material + hybrid substrate) because the transmission through the combined structure was negligible. By using MoS₂ as an example, it was demonstrated that a SHG enhancement factor of ~6 could be achieved in the 17-nm-thick MoS₂ layer on an Au/SiO₂ substrate as compared with the single-layer MoS₂ on the commonly used SiO₂/Si substrates with highly efficient SHG. By employing a SiO₂-SnO₂/Ag/SiO₂ substrate in which a 20-nm-thick dielectric film of SiO₂-SnO₂ was inserted in between the MoS₂ layer and the Ag film, a SHG enhancement factor as large as ~18 could be realized in the 9-nm-thick MoS₂ layer. Numerical simulations based on the finite-difference time-domain technique were employed to derive the enhancement factors for SHG and it was revealed that for thick MoS₂ layers the SHG intensity is dominated mainly by the localization of electric field induced by the dielectric-metal hybrid substrates. The dependence of the SHG enhancement factor on the thickness of the MoS₂ layer was found to be modified when the dielectric-metal hybrid substrates were adopted.

摘要

我们通过使用介电-金属混合衬底,对二维(2D)材料中强局域电场的实现以及显著增强的二次谐波产生(SHG)进行了数值和实验研究。基于薄膜干涉理论,研究发现,由于组合结构(即二维材料+混合衬底)的透射可忽略不计,通过最小化组合结构的反射,可以在二维材料中实现最强的电场局域,这对应于金属膜中的最大吸收。以二硫化钼(MoS₂)为例,结果表明,与具有高效SHG的常用SiO₂/Si衬底上的单层MoS₂相比,在Au/SiO₂衬底上17纳米厚的MoS₂层中,SHG增强因子可达6。通过采用SiO₂-SnO₂/Ag/SiO₂衬底,即在MoS₂层和Ag膜之间插入一层20纳米厚的SiO₂-SnO₂介电膜,在9纳米厚的MoS₂层中可实现高达18的SHG增强因子。采用基于时域有限差分技术的数值模拟来推导SHG的增强因子,结果表明,对于较厚的MoS₂层,SHG强度主要由介电-金属混合衬底诱导的电场局域主导。研究发现,当采用介电-金属混合衬底时,SHG增强因子对MoS₂层厚度的依赖性会发生改变。

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