Department of Energy Science and Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India.
Department of Chemistry, Indian Institute of Technology Bombay, Mumbai-400076, India.
Nanoscale. 2016 Apr 14;8(14):7459-65. doi: 10.1039/c5nr06974b.
The feasibility of self-saturated atomic layer deposition of Al2O3 on an organolead halide perovskite (MAPbI3-xClx) surface through a well known trimethylaluminium (TMA)-water (H2O) chemistry is studied. Though the sequential dosages of reactants form films on the perovskite surfaces, a self saturated growth is never observed. Self-saturation leads to the degradation of the material. Both experimental and density functional theory calculations are carried out for complete understanding of the growth mechanism of self-limiting Al2O3 on the perovskite surface.
通过一种众所周知的三甲基铝（TMA）-水（H2O）化学方法，研究了在有机卤化铅钙钛矿（MAPbI3-xClx）表面自饱和原子层沉积 Al2O3 的可行性。尽管反应物的顺序剂量在钙钛矿表面形成了薄膜，但从未观察到自饱和生长。自饱和会导致材料降解。为了完全理解自限制 Al2O3 在钙钛矿表面的生长机制，进行了实验和密度泛函理论计算。
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