Guan Zhaoyong, Si Chen, Hu Shuanglin, Duan Wenhui
Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, P. R. China.
School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China.
Phys Chem Chem Phys. 2016 Apr 28;18(17):12350-6. doi: 10.1039/c6cp01263a.
Based on first-principles calculations, we present the electronic and magnetic properties of a class of line defect-embedded zigzag graphene nanoribbons, with one edge saturated by two hydrogen atoms per carbon atom and the other edge terminated by only one hydrogen atom. Such edge-modified nanoribbons without line defects are found to be typical bipolar magnetic semiconductors (BMS). In contrast, when the line defect is introduced into the ribbons, the ground state is ferromagnetic, and the resulting nanoribbons can be tuned to spin-polarized metal, metal with Dirac point, or half-metal by varying the position of the line defect, owing to the defect-induced self-doping of the BMS. Specifically, when the line defect is far away from the edges of the ribbon, the system shows half-metallicity. We further confirm the structural and magnetic stability at room temperature by first-principles molecular dynamics simulations. Our findings reveal the possibility of building metal-free electronic/spintronic devices with magnetic/half-metallic graphene nanoribbons.
基于第一性原理计算,我们展示了一类嵌入线缺陷的锯齿形石墨烯纳米带的电子和磁性性质,其中一条边缘每个碳原子被两个氢原子饱和,另一条边缘仅被一个氢原子终止。发现这种没有线缺陷的边缘修饰纳米带是典型的双极磁性半导体(BMS)。相比之下,当将线缺陷引入纳米带时,基态是铁磁性的,并且由于BMS的缺陷诱导自掺杂,通过改变线缺陷的位置,可以将所得纳米带调谐为自旋极化金属、具有狄拉克点的金属或半金属。具体而言,当线缺陷远离纳米带边缘时,系统呈现半金属性。我们通过第一性原理分子动力学模拟进一步证实了室温下的结构和磁稳定性。我们的发现揭示了用磁性/半金属石墨烯纳米带构建无金属电子/自旋电子器件的可能性。