Nonoguchi Yoshiyuki, Iihara Yu, Ohashi Kenji, Murayama Tomoko, Kawai Tsuyoshi
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, 630-0192, Japan.
Chem Asian J. 2016 Sep 6;11(17):2423-7. doi: 10.1002/asia.201600810. Epub 2016 Jul 21.
The thermally-triggered n-type doping of single-walled carbon nanotubes is demonstrated using 1,1'-bis(diphenylphosphino)ferrocene, a novel n-type dopant. Through a simple thermal vacuum process, the phosphine compounds are moderately encapsulated inside single-walled carbon nanotubes. The encapsulation into SWNTs is carefully characterized using Raman/X-ray spectroscopy and transmission electron microscopy. This easy-to-handle doping with air-stable precursors for n-type SWNTs enables the large-scale fabrication of thermoelectric materials showing an excellent power factor exceeding approximately 240 μW mK(-2) .
使用新型n型掺杂剂1,1'-双(二苯基膦基)二茂铁证明了单壁碳纳米管的热触发n型掺杂。通过简单的热真空工艺,膦化合物适度封装在单壁碳纳米管内部。使用拉曼/ X射线光谱和透射电子显微镜对SWNTs中的封装进行了仔细表征。这种使用空气稳定前驱体对n型SWNTs进行易于操作的掺杂,能够大规模制造热电材料,其功率因数优异,超过约240 μW mK⁻² 。