Hu Long, Su Jiancang, Ding Zhenjie, Hao Qingsong, Fan Yajun, Liu Chunliang
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.
Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024, People's Republic of China.
Rev Sci Instrum. 2016 Aug;87(8):086107. doi: 10.1063/1.4960397.
An all solid-state high repetitive sub-nanosecond risetime pulse generator featuring low-energy-triggered bulk gallium arsenide (GaAs) avalanche semiconductor switches and a step-type transmission line is presented. The step-type transmission line with two stages is charged to a potential of 5.0 kV also biasing at the switches. The bulk GaAs avalanche semiconductor switch closes within sub-nanosecond range when illuminated with approximately 87 nJ of laser energy at 905 nm in a single pulse. An asymmetric dipolar pulse with peak-to-peak amplitude of 9.6 kV and risetime of 0.65 ns is produced on a resistive load of 50 Ω. A technique that allows for repetition-rate multiplication of pulse trains experimentally demonstrated that the parallel-connected bulk GaAs avalanche semiconductor switches are triggered in sequence. The highest repetition rate is decided by recovery time of the bulk GaAs avalanche semiconductor switch, and the operating result of 100 kHz of the generator is discussed.
本文介绍了一种全固态高重复频率亚纳秒上升时间脉冲发生器，它采用低能量触发的体砷化镓（GaAs）雪崩半导体开关和阶梯型传输线。具有两级的阶梯型传输线被充电至5.0 kV的电位，同时也为开关提供偏置。当用905 nm的激光能量以单脉冲形式照射约87 nJ时，体GaAs雪崩半导体开关在亚纳秒范围内闭合。在50 Ω的电阻负载上产生了一个峰峰值幅度为9.6 kV、上升时间为0.65 ns的不对称偶极脉冲。一种允许对脉冲序列进行重复频率倍增的技术通过实验证明了并联的体GaAs雪崩半导体开关是按顺序触发的。最高重复频率由体GaAs雪崩半导体开关的恢复时间决定，并讨论了该发生器100 kHz的运行结果。
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