Solid State and Structural Chemistry Unit, Indian Institute of Science , Bangalore 560012, India.
Cavendish Laboratory, Department of Physics, University of Cambridge , Cambridge CB3 0HE, United Kingdom.
ACS Appl Mater Interfaces. 2016 Sep 28;8(38):25415-27. doi: 10.1021/acsami.6b08453. Epub 2016 Sep 19.
n-channel organic semiconductors are prone to oxidation upon exposed to ambient conditions. Herein, we report design and synthesis of diketopyrrolopyrrole (DPP)-based oligomers for ambipolar organic thin-film transistors (OFETs) with excellent air and bias stability at ambient conditions. The cyclic voltammetry measurements reveal exceptional electrochemical stability during the redox cycle of oligomers. Structural properties including aggregation, crystallinity, and morphology in thin film were investigated by UV-visible spectroscopy, atomic force microscopy (AFM), thin-film X-ray diffraction (XRD), and grazing incidence small-angle X-ray scattering (GISAXS) measurements. AFM reveals morphological changes induced by different processing conditions whereas GISAXS measurements show an increase in the population of face-on oriented crystallites in films subjected to a combination of solvent and thermal treatments. These measurements also highlight the significance of chalcogen atom from sulfur to selenium on the photophysical, optical, electronic, and solid-state properties of DPP-DPP oligomers. Charge carrier mobilities of the oligomers were investigated by fabricating top-gate bottom-contact (TG-BC) thin-film transistors by annealing the thin films under various conditions. Combined solvent and thermal annealing of DPP-DPP oligomer thin films results in consistent electron mobilities as high as ∼0.2 cm(2) V(-1) s(-1) with an on/off ratio exceeding 10(4). Field-effect behavior was retained for up to ∼4 weeks, which illustrates remarkable air and bias stability. This work paves the way toward the development of n-channel DPP-DPP-based oligomers exhibiting retention of field-effect behavior with superior stability at ambient conditions.
n 通道有机半导体在暴露于环境条件时容易氧化。在此,我们报告了基于二酮吡咯并吡咯(DPP)的低聚物的设计和合成,用于在环境条件下具有出色的空气和偏压稳定性的双极有机薄膜晶体管(OFET)。循环伏安法测量显示低聚物在氧化还原循环过程中具有出色的电化学稳定性。通过紫外-可见光谱、原子力显微镜(AFM)、薄膜 X 射线衍射(XRD)和掠入射小角 X 射线散射(GISAXS)测量研究了包括聚集、结晶度和薄膜形貌在内的结构特性。AFM 揭示了不同处理条件引起的形貌变化,而 GISAXS 测量显示在经受溶剂和热处理组合的薄膜中,面内取向结晶的数量增加。这些测量还强调了硫到硒的杂原子对 DPP-DPP 低聚物的光物理、光学、电子和固态性质的重要性。通过在各种条件下退火薄膜,由顶部栅极底部接触(TG-BC)薄膜晶体管来研究低聚物的电荷载流子迁移率。DPP-DPP 低聚物薄膜的联合溶剂和热退火导致电子迁移率高达约 0.2 cm(2) V(-1) s(-1),开关比超过 10(4)。场效应行为可保留长达约 4 周,这表明空气和偏压稳定性非常出色。这项工作为开发 n 通道 DPP-DPP 基低聚物铺平了道路,这些低聚物在环境条件下具有保留场效应行为的能力,同时具有优异的稳定性。