Datta D P, Siva V, Varma S, Kanjilal D, Sahoo P K
School of Physical Sciences, National Institute of Science Education and Research, Bhubaneswar, HBNI, Jatni 752050, India.
Phys Chem Chem Phys. 2016 Nov 21;18(43):29955-29960. doi: 10.1039/c6cp06075g. Epub 2016 Oct 20.
A nanodot array morphology gradually develops on SiO surface when a thin bi-layer of Au and Si undergoes ion irradiation. An increasing amount of gold silicide is detected as islands on the insulator surface evolve into nanodots as a function of increasing ion fluence. Different stages of evolution from islands to nanodots are found to be driven by the localized melting of Au along the ion-track and dewetting of the metal film. Dewetting is accompanied by sputter-erosion and mixing of Au and Si at the bi-layer interface due to ion energy deposition. Interestingly, a gradual transition in wettability of the surface from the hydrophilic to the hydrophobic one is observed with the growth of nanodots, which is correlated with the compositional variation. The experimental results indicate a route towards the controlled growth of composite nanodots on an insulator surface having hydrophobic properties using ion irradiation.
当金和硅的双层薄膜受到离子辐照时,二氧化硅(SiO)表面会逐渐形成纳米点阵列形态。随着离子注量增加,绝缘表面上的岛状结构演变成纳米点,同时检测到越来越多的硅化金。发现从岛状结构到纳米点的不同演化阶段是由沿离子轨迹的金局部熔化和金属膜的去湿驱动的。由于离子能量沉积,去湿伴随着双层界面处金和硅的溅射侵蚀和混合。有趣的是,随着纳米点的生长,观察到表面润湿性从亲水性到疏水性的逐渐转变,这与成分变化相关。实验结果表明了一种利用离子辐照在具有疏水特性的绝缘体表面可控生长复合纳米点的方法。