School of Materials Science and Engineering, Shaanxi Normal University, 710119, Xi'an, China.
Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore.
Small. 2017 Jan;13(2). doi: 10.1002/smll.201602558. Epub 2016 Oct 20.
2D transition metal dichalcogenides are promising channel materials for the next-generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS ) few layers and organic crystal - 5,6,11,12-tetraphenylnaphthacene (rubrene). In this work, ambipolar field-effect transistors are successfully achieved based on MoS and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm V s , respectively. The ambipolar behavior is explained based on the band alignment of MoS and rubrene. Furthermore, being a building block, the MoS /rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of -26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices.
二维过渡金属二卤化物是下一代电子器件有前途的沟道材料。在这里，使用无机硫化钼 (MoS) 少层和有机晶体 - 5,6,11,12-四苯基萘（苝）构建了垂直二维异质结构，即范德华固体。在这项工作中，成功地基于具有平衡电子和空穴迁移率分别为 1.27 和 0.36 cm V s 的 MoS 和苝晶体实现了双极性场效应晶体管。双极性行为是基于 MoS 和苝的能带排列来解释的。此外，作为构建块，MoS/rubrene 双极性晶体管用于制造 CMOS（互补金属氧化物半导体）逆变器，在-26 V 的开关阈值电压下具有 2.3 的增益，表现出良好的性能。这项工作为基于新型有机/无机超薄异质结构的柔性电子和光电子器件铺平了道路。
