Department of Chemistry, University of Cincinnati , Cincinnati, Ohio 45221, United States.
Department of Chemistry and Department of Environmental Science, University of San Francisco , 2130 Fulton Street, San Francisco, California 94117, United States.
J Am Chem Soc. 2016 Nov 16;138(45):14905-14914. doi: 10.1021/jacs.6b05746. Epub 2016 Nov 7.
Photolysis of 3-azido-1-indenone (1) with a light-emitting diode (LED, λ = 405 nm) or mercury arc lamp (Pyrex) resulted in the formation of heterodimer 3 in excellent yield, through dimerization of triplet vinylnitrene 2. At ambient temperature, vinylnitrene 2 (λ at 340 and 480 nm) was detected directly with laser flash photolysis of vinyl azide 1. The vinylnitrene intermediate was also characterized directly with IR and ESR spectroscopy in cryogenic matrices. The ESR spectrum of vinylnitrene 2 yielded a zero-field splitting parameter |D/hc| of 0.460 cm and |E/hc| of 0.015 cm, which reveals that vinylnitrene 2 has significant 1,3-biradical character. The proposed mechanism for the formation and reactivity of triplet vinylnitrene 2 was supported with density functional theory (DFT) calculations, which highlight that the steric demand of the five-membered ring in vinylnitrene 2 prevents intersystem crossing to the corresponding azirine (10). CASSCF and CASPT2 calculations showed that the energy gap between the singlet and triplet configurations of vinylnitrene 2 is only 10 kcal/mol. In spite of this small energy gap, vinylnitrene 2 does not decay by intersystem crossing, but rather by dimerization. Thus, triplet vinylnitrenes can be selectively formed with visible light and used to form new C-N bonds in synthetic applications.
用发光二极管(LED,λ=405nm)或汞弧灯(Pyrex)对 3-叠氮-1-茚酮(1)进行光解,通过三重态乙烯基氮宾 2 的二聚反应,以优异的产率得到杂二聚体 3。在环境温度下,通过 1 的乙烯基叠氮化物的激光闪光光解直接检测到乙烯基氮宾 2(λ 在 340nm 和 480nm 处)。乙烯基氮宾中间体也直接通过低温基质中的红外和电子顺磁共振(ESR)光谱进行了直接表征。乙烯基氮宾 2 的 ESR 谱产生了 0.460cm 的零场分裂参数 |D/hc|和 0.015cm 的 |E/hc|,这表明乙烯基氮宾 2 具有显著的 1,3-双自由基特征。用密度泛函理论(DFT)计算支持了三重态乙烯基氮宾 2 的形成和反应性的提出机制,这突出表明乙烯基氮宾 2 中五元环的空间需求阻止了相应氮丙啶(10)的系间交叉。CASSCF 和 CASPT2 计算表明,乙烯基氮宾 2 的单重态和三重态构型之间的能隙仅为 10kcal/mol。尽管这个能隙很小,但乙烯基氮宾 2 不会通过系间交叉而是通过二聚反应来衰减。因此,可以用可见光选择性地形成三重态乙烯基氮宾,并在合成应用中用于形成新的 C-N 键。