一种使用蓝宝石上氮化镓紫外光电探测器阵列的微纳制造太阳传感器。

A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays.

作者信息

Miller Ruth A, So Hongyun, Chiamori Heather C, Suria Ateeq J, Chapin Caitlin A, Senesky Debbie G

机构信息

Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305, USA.

Mechanical Engineering, Stanford University, Stanford, California 94305, USA.

出版信息

Rev Sci Instrum. 2016 Sep;87(9):095003. doi: 10.1063/1.4962704.

DOI:10.1063/1.4962704

PMID:27782578

Abstract

A miniature sensor for detecting the orientation of incident ultraviolet light was microfabricated using gallium nitride (GaN)-on-sapphire substrates and semi-transparent interdigitated gold electrodes for sun sensing applications. The individual metal-semiconductor-metal photodetector elements were shown to have a stable and repeatable response with a high sensitivity (photocurrent-to-dark current ratio (PDCR) = 2.4 at -1 V bias) and a high responsivity (3200 A/W at -1 V bias) under ultraviolet (365 nm) illumination. The 3 × 3 GaN-on-sapphire ultraviolet photodetector array was integrated with a gold aperture to realize a miniature sun sensor (1.35 mm × 1.35 mm) capable of determining incident light angles with a ±45° field of view. Using a simple comparative figure of merit algorithm, measurement of incident light angles of 0° and 45° was quantitatively and qualitatively (visually) demonstrated by the sun sensor, supporting the use of GaN-based sun sensors for orientation, navigation, and tracking of the sun within the harsh environment of space.

摘要

一种用于检测入射紫外光方向的微型传感器采用蓝宝石衬底上的氮化镓（GaN）和半透明叉指金电极进行微加工，用于太阳传感应用。单个金属 - 半导体 - 金属光电探测器元件在紫外光（365 nm）照射下显示出具有稳定且可重复的响应，具有高灵敏度（在 -1 V偏压下光电流与暗电流之比（PDCR）= 2.4）和高响应度（在 -1 V偏压下为3200 A/W）。3×3蓝宝石衬底上的GaN紫外光电探测器阵列与金孔径集成，以实现一个微型太阳传感器（1.35 mm×1.35 mm），能够在±45°视场内确定入射光角度。通过一种简单的品质因数比较算法，太阳传感器对0°和45°入射光角度的测量在定量和定性（视觉上）方面都得到了证明，支持在恶劣的太空环境中使用基于GaN的太阳传感器进行太阳的定向、导航和跟踪。