Kriener Markus, Muranaka Takahiro, Kato Junya, Ren Zhi-An, Akimitsu Jun, Maeno Yoshiteru
Department of Physics, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan.
Department of Physics and Mathematics, Aoyama-Gakuin University, Sagamihara, Kanagawa 229-8558, Japan.
Sci Technol Adv Mater. 2009 Jan 28;9(4):044205. doi: 10.1088/1468-6996/9/4/044205. eCollection 2008 Dec.
The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.
2004年在重硼掺杂金刚石以及2006年在硅中发现的超导现象，重新唤起了人们对半导体超导态的兴趣。宽禁带半导体的载流子掺杂会导致金属相，进一步掺杂时可能会出现超导性。最近，我们在一个密切相关的体系中发现了超导现象：重硼掺杂碳化硅。用于该研究的样品由立方相和六方相碳化硅相组成，因此这就引出了一个问题，即它们中哪一个参与了超导。在这里，我们通过X射线衍射、电阻率和交流磁化率研究了一个不含立方相碳化硅的六方相碳化硅样品。
