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用于高质量薄膜的等离子体辅助热蒸发沉积技术的发展

Development of plasma assisted thermal vapor deposition technique for high-quality thin film.

作者信息

Lee Kang-Il, Choi Yong Sup, Park Hyun Jae

机构信息

Plasma Technology Research Center, National Fusion Research Institute (NFRI), 37, Dongjangsan-Ro, Gunsan-Si, Jeollabuk-Do 573-540, South Korea.

出版信息

Rev Sci Instrum. 2016 Dec;87(12):123501. doi: 10.1063/1.4969052.

Abstract

The novel technique of Plasma-Assisted Vapor Deposition (PAVD) is developed as a new deposition method for thin metal films. The PAVD technique yields a high-quality thin film without any heating of the substrate because evaporated particles acquire energy from plasma that is confined to the inside of the evaporation source. Experiments of silver thin film deposition have been carried out in conditions of pressure lower than 10 Pa. Pure silver plasma generation is verified by the measurement of the Ag-I peak using optical emission spectroscopy. A four point probe and a UV-VIS spectrophotometer are used to measure the electrical and optical properties of the silver film that is deposited by PAVD. For an ultra-thin silver film with a thickness of 6.5 nm, we obtain the result of high-performance silver film properties, including a sheet resistance <20 Ω sq and a visible-range transmittance >75%. The PAVD-film properties show a low sheet resistance of 30% and the same transmittance with conventional thermal evaporation film. In the PAVD source, highly energetic particles and UV from plasma do not reach the substrate because the plasma is completely shielded by the optimized nozzle of the crucible. This new PAVD technique could be a realistic solution to improve the qualities of transparent electrodes for organic light emission device fabrication without causing damage to the organic layers.

摘要

等离子体辅助气相沉积(PAVD)新技术作为一种用于沉积金属薄膜的新方法而被开发出来。PAVD技术能够在不加热衬底的情况下制备出高质量的薄膜,这是因为蒸发粒子从局限于蒸发源内部的等离子体中获取能量。在低于10 Pa的压力条件下进行了银薄膜沉积实验。通过使用发射光谱法测量Ag-I峰验证了纯银等离子体的产生。使用四点探针和紫外可见分光光度计来测量通过PAVD沉积的银薄膜的电学和光学性质。对于厚度为6.5 nm的超薄银薄膜,我们获得了高性能银薄膜的性质结果,包括方阻<20 Ω/sq和可见光范围内的透过率>75%。PAVD薄膜的性质显示出与传统热蒸发薄膜相比低30%的方阻和相同的透过率。在PAVD源中,由于等离子体被坩埚的优化喷嘴完全屏蔽,来自等离子体的高能粒子和紫外线不会到达衬底。这种新的PAVD技术可能是一种切实可行的解决方案,可用于提高用于制造有机发光器件的透明电极的质量,而不会对有机层造成损害。

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