Department of Electronic and Information Engineering the Hong Kong Polytechnic University, Hong Kong, China.
Sci Rep. 2017 Jan 3;7:39704. doi: 10.1038/srep39704.
In this paper we report the growth of high quality SnS thin films with good crystallinity deposited on two-dimensional (2D) mica substrates. It is believed that the 2D nature of SnS, with strong intra-layer covalent bonds and weak inter-layer van der Waals interactions, is responsible for its relative insensitivity to lattice mismatch. We also investigated the reduction of Sn vacancies in the material using Sn-compensation technique during the material growth process. The experimental results clearly demonstrated substantial enhancements in the electrical and structural properties for films deposited using Sn-compensation technique. A mobility of 51 cm V s and an XRD rocking curve full width at half maximum of 0.07° were obtained. Sn-compensated SnS/GaN:Si heterojunctions were fabricated and significant improvement in both the I-V characteristics and the spectral responsivities of the devices were characterized.
本文报道了在二维（2D）云母衬底上生长具有良好结晶度的高质量 SnS 薄膜。据信，SnS 的 2D 性质，具有较强的层内共价键和较弱的层间范德华相互作用，使其对晶格失配相对不敏感。我们还研究了在材料生长过程中使用 Sn 补偿技术减少材料中的 Sn 空位。实验结果清楚地表明，使用 Sn 补偿技术沉积的薄膜在电学和结构性能方面有了显著提高。获得了 51 cm V s 的迁移率和 0.07°的 XRD 摇摆曲线半高宽。制备了 Sn 补偿 SnS/GaN:Si 异质结，并对器件的 I-V 特性和光谱响应率进行了表征，发现了显著的改善。
