IBS Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science, Sungkyunkwan University, Suwon 440-746, Korea.
Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea.
Nat Commun. 2017 Jan 18;8:14116. doi: 10.1038/ncomms14116.
Whether and how fracture mechanics needs to be modified for small length scales and in systems of reduced dimensionality remains an open debate. Here, employing in situ transmission electron microscopy, atomic structures and dislocation dynamics in the crack tip zone of a propagating crack in two-dimensional (2D) monolayer MoS membrane are observed, and atom-to-atom displacement mapping is obtained. The electron beam is used to initiate the crack; during in situ observation of crack propagation the electron beam effect is minimized. The observed high-frequency emission of dislocations is beyond previous understanding of the fracture of brittle MoS. Strain analysis reveals dislocation emission to be closely associated with the crack propagation path in nanoscale. The critical crack tip plastic zone size of nearly perfect 2D MoS is between 2 and 5 nm, although it can grow to 10 nm under corrosive conditions such as ultraviolet light exposure, showing enhanced dislocation activity via defect generation.
是否以及如何修改断裂力学以适应小长度尺度和降维系统仍然是一个悬而未决的问题。在这里,通过原位透射电子显微镜观察了二维(2D)单层 MoS 膜中扩展裂纹的裂纹尖端区的原子结构和位错动力学,并获得了原子到原子的位移映射。电子束用于引发裂纹;在原位观察裂纹扩展过程中,最小化了电子束的影响。观察到的位错的高频发射超出了对脆性 MoS 断裂的先前理解。应变分析表明,位错发射与纳米级裂纹扩展路径密切相关。尽管在诸如暴露于紫外光等腐蚀性条件下,几乎完美的 2D MoS 的临界裂纹尖端塑性区尺寸可以增长到 10nm,但通过缺陷产生显示出增强的位错活动性,其临界裂纹尖端塑性区尺寸在 2nm 到 5nm 之间。