Department of Chemistry and Center for NanoScience (CeNS), University of Munich (LMU) , Butenandtstrasse 5-13, 81377 Munich, Germany.
CSIRO Manufacturing , Clayton, Victoria 3168, Australia.
ACS Nano. 2017 Mar 28;11(3):2706-2713. doi: 10.1021/acsnano.6b07692. Epub 2017 Feb 22.
Charge-carrier transport in oriented COF thin films is an important factor for realizing COF-based optoelectronic devices. We describe how highly oriented electron-donating benzodithiophene BDT-COF thin films serve as a model system for a directed charge-transport study. Oriented BDT-COF films were deposited on different electrodes with excellent control over film roughness and topology, allowing for high-quality electrode-COF interfaces suitable for device fabrication. Hole-only devices were constructed to study the columnar hole mobility of the BDT-COF films. The transport measurements reveal a clear dependency of the measured hole mobilities on the BDT-COF film thickness, where thinner films showed about two orders of magnitude higher mobilities than thicker ones. Transport measurements under illumination yielded an order of magnitude higher mobility than in the dark. In-plane electrical conductivity values of up to 5 × 10 S cm were obtained for the oriented films. Impedance measurements of the hole-only devices provided further electrical description of the oriented BDT-COF films in terms of capacitance, recombination resistance, and dielectric constant. An exceptionally low dielectric constant value of approximately 1.7 was estimated for the BDT-COF films, a further indication of their highly porous nature. DFT and molecular-dynamics simulations were carried out to gain further insights into the relationships between the COF layer interactions, electronic structure, and the potential device performance.
在取向 COF 薄膜中,电荷载流子输运是实现基于 COF 的光电设备的一个重要因素。我们描述了高度取向的给电子苯并二噻吩 BDT-COF 薄膜如何作为定向电荷输运研究的模型体系。取向的 BDT-COF 薄膜沉积在不同的电极上,对薄膜粗糙度和拓扑结构具有极好的控制,从而形成适合器件制造的高质量电极-COF 界面。我们构建了空穴-only 器件来研究 BDT-COF 薄膜的柱状空穴迁移率。传输测量结果表明,测量得到的空穴迁移率明显依赖于 BDT-COF 薄膜的厚度,其中较薄的薄膜表现出比较厚的薄膜高出两个数量级的迁移率。在光照下进行的传输测量比在黑暗中获得了高出一个数量级的迁移率。对于取向的薄膜,获得了高达 5×10 S cm 的面内电导率值。空穴-only 器件的阻抗测量进一步从电容、复合电阻和介电常数方面对取向的 BDT-COF 薄膜进行了电描述。估计 BDT-COF 薄膜的介电常数值异常低,约为 1.7,这进一步表明其具有高度多孔的性质。进行了 DFT 和分子动力学模拟,以进一步深入了解 COF 层相互作用、电子结构和潜在器件性能之间的关系。