State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , 155 Yangqiao West Road, Fuzhou, Fujian 350002, P. R. China.
University of Chinese Academy of Sciences , Beijing 100049, P. R. China.
ACS Appl Mater Interfaces. 2017 Feb 22;9(7):6186-6193. doi: 10.1021/acsami.6b13724. Epub 2017 Feb 7.
In this study, Sn-doped ZnO (ZTO) is prepared by a sol-gel method and is employed as an electron transport material for organic solar cells (OSCs). After Sn modification, the fabricated ZTO films exhibited better charge transport properties and smoother surface morphology, especially for those processed at a low temperature of 120 °C. By incorporation of the high-temperature (200 °C) processed ZTO films, inverted OSCs showed the highest power conversion efficiency (PCE) of 9.32%, which is higher than those based on the same temperature processed ZnO films. For the devices based on the low-temperature processed ZTO, a high PCE over 9.0% with long-term stability was achieved, which is much better than those based on the same temperature processed ZnO (8.46% PCE). Here, the ZTO films can be fabricated without high-temperature annealing, demonstrating their great potential as electron transport layers for efficient flexible OSCs.
在这项研究中，采用溶胶-凝胶法制备了掺锡氧化锌（ZTO），并将其用作有机太阳能电池（OSCs）的电子传输材料。Sn 修饰后，所制备的 ZTO 薄膜表现出更好的电荷输运性能和更平滑的表面形貌，尤其是在低温 120°C 下处理的薄膜。通过掺入高温（200°C）处理的 ZTO 薄膜，倒置 OSCs 表现出最高的功率转换效率（PCE）为 9.32%，高于基于相同温度处理的 ZnO 薄膜的 PCE。对于基于低温处理 ZTO 的器件，实现了超过 9.0%的高 PCE 和长期稳定性，这远优于基于相同温度处理的 ZnO（8.46% PCE）的器件。这里，ZTO 薄膜可以在不进行高温退火的情况下制备，展示了其作为高效柔性 OSCs 的电子传输层的巨大潜力。
